Quantitative C-V Study of the Electric-Field-assisted Generation of Mobile Holes

A. R. Yu,S. B. Liu,Q. Zeng,R. C. Yi,X. X. Yu,X. Y. Hou,G. Y. Zhong
DOI: https://doi.org/10.1063/1.5121862
IF: 2.877
2019-01-01
Journal of Applied Physics
Abstract:In order to study the electric-field-assisted generation of mobile holes, a capacitance-voltage method is applied to asymmetric capacitancelike devices. The concentration of mobile holes generated from charge-transfer complexes at the CuPc/MoO3 interface was studied both theoretically and experimentally. Furthermore, the efficiency of charge generation at various electric fields was also calculated. The capacitance of the device with only a 0.2 nm MoO3 layer first increased and then decreased during bias sweeping from 0 V to −30 V. The capacitance variation is in good agreement with theoretical calculation, which in turn strongly confirms the existence of electric-field-assisted generation mechanism of the mobile holes.
What problem does this paper attempt to address?