Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Observing Large Ferroelectric Polarization In Top-Electrode-Free Al:Hfo2 Thin Films With Al-Rich Strip Structures

A Synergistic Interplay Between Dopant Ald Cycles And Film Thickness On The Improvement Of The Ferroelectricity Of Uncapped Al:Hfo2 Nanofilms

A synergistic interplay between dopant ALD cycles and film thickness on the improvement of the ferroelectricity of uncapped Al:HfO 2 nanofilms

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

Effect of dopant spatial distribution on ferroelectric Al-doped HfO<inf>2</inf>thin films in post-deposition annealing

Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Ferroelectricity in the Al doped HfO2

Ultralarge polarization in ferroelectric hafnia-based thin films

Interfacial stress engineering toward enhancement of ferroelectricity in Al doped HfO 2 thin films

Effects of Al doping concentration and top electrode on the ferroelectricity of Al-doped HfO2 thin films

Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Effect of the number and distribution of Al2O3 atomic layer deposition cycles within HfO2 layer on ferroelectric characteristics

High Annealing Temperature Assisted Broadening of the Ferroelectric Concentration Window in Al:HfO2 MFS Structures

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO $_{\text{2}}$ Film by Fast Ramping and Fast Cooling Process

Large Polarization of Hf 0.5 Zr 0.5 O x Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering

Investigation of Hf0.5Zr0.5O2 Ferroelectric Film Sat Low Thermal Budget (300°C)

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO<sub>2</sub>films

Realization of Excellent Ferroelectricity in PDA-derived Hf0.5Zr0.5O2 Films Through Insertion of an Ultrathin Ti Metal Layer

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2films.