Abstract:Combining the experimental characterization with the large-scale density functional theory calculations based on finite-element discretization (DFT-FE), we address the stabilization of polar orthorhombic phases (o-HfO2) in Al:HfO2 nanofilms by means of the atomic registry distortions and lattice deformation caused by Al substitutional defects (Al-Hf) and Schottky defects (2Al(Hf) + V-O) in tetragonal phases (t-HfO2) or monoclinic phases (m-HfO2). The phase transformation directly from the t-HfO2 into polar o-HfO2 are also elucidated within a heterogeneous distribution of Al dopants in both t-HfO2 bulk crystal structure and Al:HfO2 nanofilm. It is revealed using large-scale DFT calculations that the Al substitutional defects (Al-Hf) or the Schottky defect (2Al(Hf) + V-O) could induce the highly extended atomic registry distortions or lattice deformation in the t- and m-HfO2 phases, but such effects are greatly diminished in ferroelectric orthorhombic phase. By purposely engineering the multiple Al-Hf defects to form dopant-rich layers in paraelectric t-HfO2 nanofilm or bulk crystal, the induced extended lattice distortions surrounding the defect sites exhibit the shearing-like atomic displacement vector field. The large-scale DFT calculations further predicted that the shearing-like microscopic lattice distortions could directly induce the phase transformation from the t-HfO2 into polar orthorhombic phase in both Al:HfO2 bulk crystal and nanofilms, leading to the large remanent polarization observed in Al:HfO2 nanofilms with the presence of Al-rich layers. The current study demonstrates that the ferroelectricity of HfO2 bulk crystal or thin film can be optimized and tuned by delicately engineering both the distribution and concentration of Al dopants in atomic layer deposition without applying the top capping electrode, providing the extra flexibility for designing the HfO2 based electronic devices in the future.

Contribution of oxygen vacancies to phase transition and ferroelectricity of Al:HfO2films.

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO 2 films

Contribution of oxygen vacancies to the phase transition and ferroelectricity of the Al:HfO<sub>2</sub>films

Contribution of Oxygen Vacancies to Phase Transition and Ferroelectricity of Al:HfO2 Films

Phase Transitions and Anti-Ferroelectric Behaviors in Hf1-xZrxO2 Films

Contribution of the Interfacial Oxygen Vacancies on the Asymmetric Switching Behaviors of the Al:Hf0.5Zr0.5O2 Ferroelectric Films

Ferroelectric structural transition in hafnium oxide induced by charged oxygen vacancies

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Understanding the Effect of Oxygen Content on Ferroelectric Properties of Al-Doped HfO Thin Films

Influence of Annealing Atmosphere on Polarization Behaviors of Hf0.5Zr0.5O2 Ferroelectric Films Deposited on Ti Electrodes

Ferroelectricity in Al-doped HfO2 on Highly Doped Si Substrate

Modulating the Microscopic Lattice Distortions Through the Al-rich Layers for Boosting the Ferroelectricity in Al:HfO2 Nanofilms

Formation of a Polar Ferroelectric Phase in HFO2 Films Depending on Annealing Conditions and Chemical Properties of Impurities

Synergistic effect of strain and oxygen vacancy on the ferroelectric properties of hafnium oxide-based ferroelectric films

Ferroelectricity in the Al doped HfO2

Oxygen Vacancy Modulation and Enhanced Switching Behavior in HfOx Film Induced by Al Doping Effect

Kinetical Phase Transition Paths and Phase Stability in Ferroelectric HfO2

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Impact of Oxygen Vacancy on Ferroelectric Characteristics and Its Implication for Wake-Up and Fatigue of HfO2-Based Thin Films

Orientation control of phase transition and ferroelectricity in Al-doped HfO2 thin films

Kinetical phase transition paths and phase stability in ferroelectric HfO 2