Abstract:In this paper, a novel 4H-SiC double reduced surface field (RESURF) LDMOS with a one-step doped Ptop layer and a Pburried layer (SDP LDMOS) has been proposed to optimize the electric field distribution and enhance the breakdown voltage. By using the step doping (SD) technology, the Ptop layer and the Pburried layer introduced extra electric field peaks in the drift region, hence the lateral and the vertical electric field distributions have been optimized simultaneously and the breakdown voltage has been improved significantly. In addition, the Pburried layer facilitated the depletion of the drift region. Therefore, for similar breakdown voltage rating, higher doping concentration of the drift region and smaller specific on-resistance have been achieved. It was found by the finite element numeric simulation that the proposed device exhibited a high breakdown voltage (BV) of 1934 V and a low specific on-resistance (Ron,sp) of 4.04 mΩ·cm 2 (at V GS = 10 V, V DS = 1 V), resulting in a 49% higher Baliga's figure of merit (FOM, defined as BV 2 /Ron,sp) 925.8 MW/cm 2 than that of the conventional double RESURF LDMOS.

1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications

Design and Experimental Demonstration of 4H-SiC Lateral High-Voltage MOSFETs With Double-RESURFs Technology for Power ICs

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

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RESURF Ga_2O_3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

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First Demonstration of RESURF and Superjunction SS- Ga2O3 MOSFETs with P-Nio/n- Ga2O3 Junctions

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

4H-SiC trench gate MOSFETs with field plate termination

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

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Novel SOI Double-Gate MOSFET with a P-type Buried Layer

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An Ultralow Specific On-Resistance 200V LDMOS for Voltage Extension of a 0.18µm BCD Process

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Double-self-aligned Short-Channel Power DMOSFETs in 4H-Sic