Abstract:Bipolar devices are extremely sensitive to ionization effects, and their low dose rate radiation damage is more serious than their high dose rate radiation damage, which phenomenon is especially named enhanced low dose rate sensitivity. In the actual space radiation environment, the radiation dose rate of the device is extremely low. Currently, the enhanced low dose rate sensitivity effect has become a key factor of evaluating the reliability of spacecraft and its electronic systems, due to the fact that the low dose rate irradiation test needs longer time. The method to speed up the test on the ground is one of the hottest topics in this research area. In recent years, some researches have suggested that the use of hydrogen immersion irradiation for accelerating the test can simulate low dose rate radiation damage to some extent, but the damage mechanism has not been analyzed in detail. In this paper, the mechanisms of electrical properties and deep level defects for the 3DG111 transistor by 60Co gamma ray under high and low dose rates in the cases with and without hydrogen are investigated. In order to analyze the damage mechanism of bipolar junction transistor, the excess base current and deep level transient spectrum are measured by using semiconductor parameter analyzer and deep level transient spectroscopy. The experimental results show that the current gain degradation of 3DG111 transistor is more serious under low dose rate radiation than under high dose rate radiation, at the same time, the excess base current of transistor increases significantly. This shows that in the device there appears the enhanced low dose rate sensitivity. Under both high dose rate radiation and low dose rate irradiation, the radiation damage defects are the traps for both oxide positive charge and interface state. Under the low dose rate irradiation, there are two main reasons for the increase in transistor damage. First, the oxide charge concentration increases under low dose rate irradiation, and the oxide charge and interface state energy levels move toward the middle band. Eventually, the space charge region recombination of the transistor is intensified, and thus causing the excessive base current of the transistor to increase and transistor performance to degrade. The comparison shows that the number and type of defects under the high dose rate irradiation are the same as those under the low dose rate irradiation. Based on the analysis, the hydrogen treatment can be used as an effective method of accelerating the assessment of radiation damage enhancement effect at low dose rates.

Modulation of Radiation Resistance by Hydrogen Soaking and Aging Treatment in Transistors

Hydrogen Soaking Irradiation Acceleration Method: Application to and Damage Mechanism Analysis on 3DG111 Transistors

Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Study on Ionization Damage of Silicon-Germanium Heterojunction Bipolar Transistors at Various Dose Rates

Impact of Passivation Layers on Irradiation Response of PNP Transistors under Different Dose Rates

Ionization damage behavior of gate controlled lateral PNP(GLPNP) transistors in H2 environment

Effect of H2 on Interface Traps in the LPNP Transistors Caused by 3 MeV Proton Irradiations

Degradation mechanisms of current gain in NPN transistors

The Total-Dose-effects of Gamma and Proton Irradiations on High-Voltage Silicon–germanium Heterojunction Bipolar Transistors

Research on Total Dose Effect of Double Polysilicon Self-Aligned NPN Transistors

Influence of enhanced low dose rate sensitivity on single-event transient degradation in the LM158 bipolar operational amplifier

Influence of Electrical Field on the Susceptibility of Gallium Nitride Transistors to Proton Irradiation

Radiation Defects and Annealing Study on PNP Bipolar Junction Transistors Irradiated by 3-Mev Protons

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

A Direct Evidence of the Annealing Effect of Ionization Damage on Displacement Damage in NPN Transistors

Effect of Electric Field on Radiation Defects in NPN Transistors

Synergistic Effects of NPN Transistors Caused by Combined Proton Irradiations with Different Energies

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Reduced Low Dose Rate Sensitivity and its Mechanism in Bipolar Junction Transistors