Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors

Xingji Li,Jianqun Yang,Daniel M. Fleetwood,Chaoming Liu,Yidan Wei,H. J. Barnaby,K. F. Galloway
DOI: https://doi.org/10.1109/tns.2018.2837032
IF: 1.703
2018-01-01
IEEE Transactions on Nuclear Science
Abstract:The effects of 70-keV and 1-MeV electron irradiations on gate-controlled lateral PNP (GLPNP) transistors are evaluated with and without molecular hydrogen (H-2) soaking. At a given ionization dose, 1-MeV electron irradiation causes more degradation of current gain in GLPNP transistors that have not been soaked in H-2 than 70-keV electrons. This is because linear bipolar transistors are sensitive to both ionization and displacement damage effects, and because 1-MeV electrons induce significant displacement damage in Si-based bipolar junction transistors and 70-keV electrons do not. In H-2-soaked transistors, the degradation is much larger than in unsoaked devices, and similar amounts of degradation are observed for 70-keV electron irradiation and 1-MeV electron irradiation. This occurs because ionization-induced release, transport, and reactions of hydrogen in the bipolar-base oxide greatly enhance interface-trap buildup and dominate device response in H-2-soaked devices, and because charge yield ratios for 70-keV and 1-MeV electron irradiations differ by less than similar to 20%.
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