Abstract:In this work, we fabricated the transmission line model test structures of Ti/Al/Ni/Au Ohmic contact on the lattice-matched In0.17Al0.83 N/GaN heterostructures, grown on the silicon and sapphire substrates respectively, and studied the temperature-dependent characteristics of the sheet resistance (R-sh) and the specific contact resistivity (rho(SC)). The ln(R-sh)-ln(T) plot has two distinct linearly dependent regions: 1) At T < 200 K, the slope is close to zero, indicating the comparable impurity and phonon scattering components; 2) At T > 200 K, it becomes much smaller than zero, as the phonon scattering effect becomes significant. Increasing the temperature from 100 K to 523 K, rho(SC) exhibits a typical roll-over behavior: 1) At T < 350 K, a "metal-like" property is important, featuring a power-law coefficient of alpha similar to 1.95, which is ascribed to the formation of TiN protrusions across the InAlN barrier after the rapid thermal annealing; 2) At T > 350 K, a thermionic field emission current model agrees well with the experimental data points, and the effective barrier heights are extracted to be about 1.21 eV and 0.81 eV for the samples on the silicon and sapphire substrates, respectively.

Ohmic Contact of Pt/Au on Hydrogen-Terminated Single Crystal Diamond

Thermal stability investigation for Ohmic contact properties of Pt, Au, and Pd electrodes on the same hydrogen-terminated diamond

Palladium Ohmic Contact on Hydrogen-Terminated Single Crystal Diamond Film

Ohmic Contact Between Iridium Film And Hydrogen-Terminated Single Crystal Diamond

Annealing Temperature on Contact Properties Between Nickel Film and Hydrogen-Terminated Single Crystal Diamond

Reliable Ohmic Contact Properties for Ni/Hydrogen-Terminated Diamond at Annealing Temperature up to 900 °C

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Influence of the Pt Barrier on Ti/Al/Pt/Au Ohmic Contacts to N-Gan Studied by Rutherford Backscattering Spectrometry and X-Ray Diffraction

Electronic structures of metal/H-diamond (111) interfaces by ab-initio studies

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Precise Characterization of Atomic-Scale Corrosion of Single Crystal Diamond in H2 Plasma Based on MEMS/NEMS

Effects of Rapid Thermal Annealing on the Contact of Tungsten/p-Diamond

Ohmic Contact Performance Between Ti/Al/Ti/Au and AlGaN

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

The Use of a Double Mask System to Prevent Ti Diffusion from a Ti/Pt/Au Ohmic Contact on Diamond

The Influence of Hydrogen Plasma Etching on the Surface Conductivity of the Polycrystalline Diamond Surface and the Temperature-Dependent Properties

Surface Morphology Investigation of Au and Pt Electroless Contact on ZnCdTe Crystal by Atomic Force Microscopy

Metal/n-AlGaN Ohmic Contact

Record Low Contact Resistivity of 10-8 Ω Cm2 Ohmic Contacts on Oxygen-Terminated Intrinsic Diamond by Transition Metals Metallization

Temperature Dependent Characteristics of Ti/Al/Ni/Au Ohmic Contact on Lattice-Matched In0.17Al0.83N/GaN Heterostructures

Ohmic Contact Mechanism of Ni/Au Contact to P-Type Gan Studied by Rutherford Backscattering Spectrometry