A High Performance Radiation-Hardened SRAM Cell Based on Quatro

Yuyong Jia,Zhengping Li,Chunyu Peng
DOI: https://doi.org/10.1587/elex.16.20190335
2019-01-01
IEICE Electronics Express
Abstract:On the basis of the classical Quatro-10T structure, this paper proposes a novel radiation-hardened SRAM cell with the bulk silicon process read-write separation mode. At the circuit level, the gate isolation mode of double-ended writing and single-ended reading is adopted, which greatly improves the read static noise margin whilst guaranteeing the writing speed. Moreover, the use of single-ended reading lines reduces the switching power consumption of memory cells (the main part of dynamic power consumption), and stacked PMOS transistors are used to ensure the same driving capacity and area size at the layout level. Given the introduction of source isolation technology, the 3-D TCAD mixedmode simulation results corroborate that the proposed RHBQ (Radiation Hardened Based on Quatro-10T) SRAM cell has a greatly more efficient single event upset immunity than the classical Quatro-10T cell.
What problem does this paper attempt to address?