Phase Transformation of Monocrystalline Silicon by Nanoindentation – Effect of Processing Temperature

Yachao Wang,Jing Shi
DOI: https://doi.org/10.1016/j.mssp.2019.104601
IF: 4.1
2019-01-01
Materials Science in Semiconductor Processing
Abstract:Temperature is an important parameter for material processing. In this study, a fundamental investigation on nanoindentation of single crystal silicon is carried out using molecular dynamic (MD) simulation. The simulation cases are constructed at five levels of processing temperature, namely, 30K, 100K, 300K, 500K and 700K to study the temperature effect on silicon phase transformation and indenter/work interfacial tribological behaviors. The results reveal that high processing temperatures promote earlier formation of bct-5 phase, but the difference in the number of bct-5 silicon atoms is insignificant at the maximum indentation position among the different cases. Meanwhile, higher processing temperatures also result in the earlier formation of β-silicon. However, substantially fewer β-silicon atoms are observed at the maximum indentation position for the cases of higher temperatures in that higher pressures are required for the formation of β-silicon at elevated temperatures. In the range of 30-500K, higher temperatures lead to smaller overall normal stress and peak shift of friction force distribution on the indenter/work interface. At 700K, stress distribution on the interface exhibits significant randomness. Furthermore, lower temperatures are beneficial to preserve the indentation geometry after tool retraction as a result of reduction of atom adhesion effect between the indenter and work material.
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