Abstract:With the development of new designs and materials for nano-scale transistors, vertical Gate-All-Around Field Effect Transistors (vGAAFETs) with germanium as channel materials have emerged as excellent choices. The driving forces for this choice are the full control of the short channel effect and the high carrier mobility in the channel region. In this work, a novel process to form the structure for a VGAA transistor with a Ge channel is presented. The structure consists of multilayers of Si0.2Ge0.8/Ge grown on a Ge buffer layer grown by the reduced pressure chemical vapor deposition technique. The Ge buffer layer growth consists of low-temperature growth at 400 °C and high-temperature growth at 650 °C. The impact of the epitaxial quality of the Ge buffer on the defect density in the Si0.2Ge0.8/Ge stack has been studied. In this part, different thicknesses (0.6, 1.2 and 2.0 μm) of the Ge buffer on the quality of the Si0.2Ge0.8/Ge stack structure have been investigated. The thicker Ge buffer layer can improve surface roughness. A high-quality and atomically smooth surface with RMS 0.73 nm of the Si0.2Ge0.8/Ge stack structure can be successfully realized on the 1.2 μm Ge buffer layer. After the epitaxy step, the multilayer is vertically dry-etched to form a fin where the Ge channel is selectively released to SiGe by using wet-etching in HNO3 and H2O2 solution at room temperature. It has been found that the solution concentration has a great effect on the etch rate. The relative etching depth of Ge is linearly dependent on the etching time in H2O2 solution. The results of this study emphasize the selective etching of germanium and provide the experimental basis for the release of germanium channels in the future.

A Novel Three-Layer Graded SiGe Strain Relaxed Buffer for the High Crystal Quality and Strained Si0.5Ge0.5 Layer Epitaxial Grown

High Crystal Quality Strained Si0.5Ge0.5 Layer with a Thickness of Up to 50 Nm Grown on the Three-Layer SiGe Strain Relaxed Buffer

Ultrathin Low Temperature Si0.75Ge0.25/Si Buffer Layer for the Growth of High Quality Ge Epilayer on Si (100) by RPCVD

Relaxed Ge0.9si0.1 Alloy Layers with Low Threading Dislocation Densities Grown on Low-Temperature Si Buffers

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1−x Ge x /Si buffer layer by RPCVD

Fabrication and Characterization of Strained Si Material Using SiGe Virtual Substrate for High Mobility Devices

High quality Ge epilayer on Si (100) with an ultrathin Si1-xGex/Si buffer layer by RPCVD

High Quality Ge Epilayer on Si (1 0 0) with an Ultrathin Si1−xGex/Si Buffer Layer by RPCVD

Relaxed GeSi Alloy Grown on Low-Temperature Buffers by MBE

A New Method of Fabricating Strained Silicon Materials

Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/High-Temperature Ge Buffer Layer and Selective Wet-Etching of Germanium

HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

Fabrication of Strained Silicon Using Reduced Pressure Chemical Vapor Deposition Process

Promoting Strain Relaxation of Si0.72ge0.28 Film on Si (100) Substrate by Inserting A Low-Temperature Ge Islands Layer in Uhvcvd

Epitaxial Growth of Fully Relaxed Si0.75Ge0.25 on SOI Substrate

The growth and quality evaluation of strained Si material with multilayer structure

Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nanodiffraction

High-quality Strain-Relaxed Si0.72Ge0.28 Layers Grown by MBE-UHV/CVD Combined Deposition Chamber

Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density

A novel approach to Si0.5Ge0.5 channel FinFET fabrication: utilizing a three-layer SiGe strain relaxation buffer and In-Situ phosphorus doping