Abstract:Abstract Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

Growth and Characteristics of SiO2/Si3N4 Photonic Crystal Filter with Anti-Reflection Coatings

Al 0.4 Ga 0.6 N/Al 0.15 Ga 0.85 N Separate Absorption and Multiplication Solar-Blind Avalanche Photodiodes with a One-Dimensional Photonic Crystal Filter

A High-Performance SiO<sub>2</sub>/SiN<italic><sub>x</sub></italic> 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

A High-Performance SiO 2 /SiN x 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors

Back-illuminated AlGaN Heterostructure Solar-Blind Avalanche Photodiodes with One-Dimensional Photonic Crystal Filter

Highly solar-blind ultraviolet selective metal-semiconductor-metal photodetector based on back-illuminated AlGaN heterostructure with integrated photonic crystal filter

An Improved Design for Solar-Blind AlGaN Avalanche Photodiodes

Electro-optical Characteristics for AlGaN Solar-Blind P-I-n Photodiode: Experiment and Simulation

High-performance solar-blind photodetector of β-Ga 2 O 3 grown on sapphire with embedding an ultra-thin AlN buffer layer

High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet P—i—n Photodetectors

AlGaN Solar‐blind APD with Low Breakdown Voltage

Improved visible-blindness of AlGaN deep ultraviolet photodiode with monolithically integrated angle-insensitive Fabry-Perot filter

High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure As Separate Absorption and Multiplication Regions

An Improved Design for AlGaN Solar-Blind Avalanche Photodiodes with Enhanced Avalanche Ionization

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga 2 O 3 Thin Films Grown on p -Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal-Organic Chemical Vapor Deposition

High-Gain AlGaN Solar-Blind Avalanche Photodiodes

Nanoplasmonically Enhanced High-Performance Metastable Phase Α-Ga2o3 Solar-Blind Photodetectors

Study on AlGaN P-I-N-I-N solar-blind avalanche photodiodes with Al 0.45 Ga 0.55 N multiplication layer

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays

Broadband anti-reflection coating for Si solar cell applications based on periodic Si nanopillar dimer arrays & Si 3 N 4 layer

A Back-Illuminated Al0.42 Ga0.58 N/Al0.40 Ga0.60 N Heterojunction P-I-n Solar-Blind UV Photodetector