Abstract:Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Insight into Al–Si Interface of PERC by Kelvin Probe Force Microscopy

Insight into Interfaces and Junction of Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Investigation on the passivated Si/Al2O3 interface fabricated by non-vacuum spatial atomic layer deposition system

Influence of Al2O3/SiNx Rear-Side Stacked Passivation on the Performance of Polycrystalline PERC Solar Cells

Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

Improvement of Light Trapping in Bifacial PERC Silicon Solar Cells by Optimizing the Rear Surface Morphology

Passivated Emitter and Rear Cell Silicon Solar Cells with a Front Polysilicon Passivating Contacted Selective Emitter

Revealing the Working Mechanisms of Planar Perovskite Solar Cells With Cross-Sectional Surface Potential Profiling

Quantitative Understanding and Implementation of Screen Printed p+ Poly-Si/Oxide Passivated Contact to Enhance the Efficiency of p-PERC Cells

High-Efficiency Silicon Inverted Pyramid-Based Passivated Emitter and Rear Cells

Light management of PERC solar cell with the front and back dielectric multilayers

Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

Al-Si contact formation involving back surface field and voids of PERC

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

Characterization of 23-percent efficient silicon solar cells

Characterization of rear-side potential-induced degradation in bifacial p-PERC solar modules

Optimization of Rear-Side Passivation for Enhancing the Performance of Bifacial PERC+ Solar Cells

Potential‐induced electrochemical corrosion in crystalline silicon solar cells

Introducing a supercritical fluid technique to reduce passivation layer interface defects in passivated emitter rear contact cells