Abstract:Among all available photovoltaic (PV) technology options, c-Si based passivated emitter rear cell (PERC) has already proved its mettle by delivering more than 22% conversion efficiency at the industrial level. However, designing of PERC solar cell device remains a challenge owing to recombination and absorption losses, which eventually restrict the performance of the device toward achieving an Auger efficiency limit of 29.4%. The primary contributor to these losses is emitter recombination losses that limits the performance of PERC devices. The n + -emitter region in the proposed PERC devices is formed using ion implantation followed by a diffusion process. The impact of process variables such as dose (cm−2), energy (keV), diffusion time (s), and diffusion temperature (oC) on the PERC device performance is not much explored. Therefore, in an attempt to fulfill this research gap, the emitter region performance in terms of ion implantation of phosphorus, influence of local back surface field (BSF) doping concentration (1017 to 1019 cm−3), and back surface recombination velocity (SRV 101–107 cm/s) on PERC device performance followed by the loss analysis is examined in this work. An upright pyramid textured structure with constant height (5 μm) and industrial standard stacked dielectric anti-reflective coating layers, SiNX/SiO2 and Al2O3/SiNX at front and back side respectively is realized using different process statements such as deposit, etch, implantation, and diffusion with the help of a Silvaco TCAD software. Investigations reveal that the PERC device can deliver an efficiency of 22.8% with 150 μm boron-doped crystalline silicon (c-Si) wafer at an optimum phosphorous dose (5 × 1015 cm−2), BSF doping (1019 cm−3), and SRVn (107 cm/s). Short-circuit current density (JSC) of 40.8 mA/cm2, open-circuit voltage (VOC) of 0.686 V, and fill factor (FF) of 81.54% are obtained for the structure under consideration. A roadmap to achieve 23.5% conversion efficiency has also been reported by assuming a carrier selective contact at the backside with a surface recombination velocity of 10 cm/s.

Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

Exploring the Way To Approach the Efficiency Limit of Perovskite Solar Cells by Drift-Diffusion Model

Recombination Behaviour of Passivated Emitter and Rear Cell (PERC) Bifacial Silicon Solar Module under Different Illuminations

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Insight into Al–Si Interface of PERC by Kelvin Probe Force Microscopy

Theoretical Investigation on Interfacial-Potential-Limited Diffusion and Recombination in Dye-Sensitized Solar Cells

The Effects of Interfacial Recombination and Injection Barrier on the Electrical Characteristics of Perovskite Solar Cells

Improved performance on multi-crystalline silicon solar cells by optimizing aluminum back surface field process

The Effect and Mechanism of Current Injection to Suppress Light and Elevated Temperature Induced Degradation in P-Type Cast-Mono and Multicrystalline Silicon Passivated Emitter and Rear Cells

Influence of the Compensation Level on the Performance of P-Type Crystalline Silicon Solar Cells: Theoretical Calculations and Experimental Study

Unveiling Recombination in Top Cells: SCAPS-1D Simulations for High-Efficiency Bifacial Planar Perovskite/silicon Tandem Solar Cells

Interpretation Of The Commonly Observed I-V Characteristics Of C-Si Cells Having Ideality Factor Larger Than Two

Edge Effect in Silicon Solar Cells with Dopant-Free Interdigitated Back-Contacts

An In-Depth Analysis of the Silicon Solar Cell Key Parameters’ Optimal Magnitudes Using PC1D Simulations

Correlation Between Carrier Recombination and Valence Band Offset Effect of Graded Cu(In,Ga)Se2 Solar Cells

Current Injection‐induced Performance Enhancement in n‐type Silicon Heterojunction Solar Cells

Preventing the Formation of Voids in the Rear Local Contact Areas for Industrial-Type PERC Solar Cells

22.8% efficient ion implanted PERC solar cell with a roadmap to achieve 23.5% efficiency: A process and device simulation study

Determination of Effective Diffusion Length and Saturation Current Density in Silicon Solar Cells

Method and Equipment for Reducing the Efficiency Degradation of Monocrystalline Passivated Emitter and Rear Cells

Detailed Modeling Recombination In Pid-Affected N-Type Monocrystalline Silicon Solar Module