A Numerical Model of P–n Junctions Bordering on Surfaces

PP Altermatt,AG Aberle,JH Zhao,AH Wang,G Heiser
DOI: https://doi.org/10.1016/s0927-0248(02)00061-2
IF: 6.9
2002-01-01
Solar Energy Materials and Solar Cells
Abstract:Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (C) 2002 Elsevier Science B.V. All rights reserved.
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