Abstract:RRAM, utilizing ALD, assures efficient and stable resistance switching in sub‐10 nm devices. This review highlights the technological advantages of ALD and delves into the impact of ALD on the microscopic resistive mechanisms, the switching films, and the electrodes. ALD‐driven RRAM is poised to revolutionize information storage and neural networks, offering smaller, faster, and more reliable memory solutions. Resistive random‐access memory (RRAM) stands out as a promising memory technology due to its ease of operation, high speed, affordability, exceptional stability, and potential to enable smaller memory devices with sizes under 10 nm. This has drawn significant attention, with atomic layer deposition (ALD) emerging as an ideal technology to tackle the challenges of nanoscale fabrication in the micro‐ and nanomanufacturing industry. ALD offers technological advantages such as functional multiple‐layer stacking, doping capabilities, and incorporating oxygen reservoirs or reactive layers. These factors contribute to achieving more intriguing, stable, and reliable nonvolatile resistance switching behaviors in RRAM. Specifically, ALD greatly benefits RRAM, that relies on the valence change mechanism, where high‐k transition metal oxides are commonly used as switching materials, and precise control over oxygen vacancies is achievable. This review provides a comprehensive overview of ALD films used in RRAM, delves into resistive switching properties and microscopic mechanisms in binary and ternary oxides and nitrides, and explores the impact of ALD‐prepared electrodes. Furthermore, the current status and future prospects of ALD‐based RRAM are highlighted, which is poised to catalyze further advancements in the fields of information storage and neural networks.

Improved Resistive Switching Characteristics of Atomic Layer Deposited Al2O3/La2O3/Al2O3 Multi-Stacked Films with Al+ Implantation

Resistive Switching Properties of HfO[sub 2]-Based ReRAM with Implanted Si/Al Ions

Nonvolatile Bipolar Resistive Switching Characteristics of Aluminum Oxide Grown by Thermal Oxidation Processes

Annealed AlOx Film with Enhanced Performance for Bipolar Resistive Switching Memory

Atomic Layer Deposition Films for Resistive Random‐Access Memories

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Enhancement of Resistive Switching Performance in Hafnium Oxide (HfO2) Devices via Sol-Gel Method Stacking Tri-Layer HfO2/Al-ZnO/HfO2 Structures

Improved Al 2 O 3 RRAM performance based on SiO 2 /MoS 2 quantum dots hybrid structure

High-density WOx-based RRAM with a W-doped AlOx insertion layer

Resistive switching memory effect of films with implanted

Gd-Doping Effect on Performance of Hfo2 Based Resistive Switching Memory Devices Using Implantation Approach

Effect of Rapid Thermal Annealing on Resistive Switching Uniformity of HfAlOx Based RRAM Devices

Multi-Level Analog Resistive Switching Characteristics in Tri-Layer HfO2/Al2O3/HfO2 Based Memristor on ITO Electrode

Al2O3/HfO2 Functional Stack Films Based Resistive Switching Memories with Controlled SET and RESET Voltages

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications

Atomic Layer Deposition of Ga2O3/ZnO Composite Films for High-Performance Forming-Free Resistive Switching Memory.

Occurrence of Resistive Switching and Threshold Switching in Atomic Layer Deposited Ultrathin (2 nm) Aluminium Oxide Crossbar Resistive Random Access Memory

Self-compliance Multilevel Resistive Switching Characteristics in TiN/HfOx/Al/Pt RRAM Devices

A TaO<sub>x</sub>-Based RRAM with Improved Uniformity and Excellent Analog Characteristics by Local Dopant Engineering

Highly uniform bipolar resistive switching with Al2}O 3 buffer layer in robust NbAlO-based RRAM

Resistive Switching Memory Effect of ZrO2 Films with Zr+ Implanted