Investigation of Al droplet wetting behavior on highly-oriented SiC

Song Zhang,Kaixin Zuo,Pengjian Lu,Qingfang Xu,Meijun Yang,Kai Liu,Rong Tu

DOI: https://doi.org/10.1039/d3ra03335j

IF: 4.036

2023-01-01

RSC Advances

Abstract:In the integrated circuit industry, metal liquids are frequently in contact with chemical vapor deposited (CVD) SiC, and it is important to understand the interactions between CVD-SiC and metal droplets.

chemistry, multidisciplinary

What problem does this paper attempt to address?

Study of the 3C-SiC surface crystalline orientation effect on the wettability of molten aluminium droplets by molecular dynamics simulation

Yi Lv,ShiLong Shen,Feng Liao,Perk Lin Chong

DOI: https://doi.org/10.1016/j.mtcomm.2023.105419

IF: 3.8

2023-01-18

Materials Today Communications

Abstract:Aluminium silicon carbide (AlSiC) composites are silicon carbide (SiC) ceramic-reinforced aluminium matrix composites. When wide band-gap semiconductors, typically silicon carbide (SiC) and gallium nitride (GaN), work at high power density and high operating temperature, AlSiC is usually used as the thermal management material to dissipate a large amount of heat accumulated in the devices, thus reducing equipment failures caused by thermal runaway. Wetting is an important property to be considered because it can affect the heat transfer performance of AlSiC. The purpose of this work was to study the influence of 3 C-SiC crystalline orientation on the wetting behaviour of molten aluminum droplets through molecular dynamics simulation. The density distribution of Al droplets obtained on the (110) plane was stratified, while on the (111) plane, a relatively dense spindle region appeared. The physical quantities associated with the wettability of aluminium droplets on the (110) and (111) planes were also analysed. The contact angles on these two crystal planes obtained after fitting were 84.3° and 95.3°, respectively. The droplet exhibits a wetting state on the (110) plane while presenting characteristics between wetting and hydrophobicity on the (111) plane. The magnitude of the interface energy fluctuation of the (110) system was between − 17 kJ/mol and − 27 kJ/mol which was less than that of the (111) system. In the time step 2.85 × 10 5 fs before and after fitting, the average self-diffusion coefficients of aluminium droplets in the (111) system increased by 2.29 × 10 −8 and 1.9 × 10 −7 m 2 /s compared with those in the (110) system. Although it was more difficult for molten aluminium to diffuse on the (110) plane, it took longer time for the (111) system to reach stability. This further showed that the role of the 3 C-SiC crystalline orientation on droplet wettability cannot be ignored. Therefore, understanding the influence of crystal orientation on the wetting characteristics of AlSiC during its preparation is helpful for improving its heat transfer performance, and to ensure the reliable operation of wide band-gap semiconductor devices.

materials science, multidisciplinary
Wetting Behavior of Metal Catalyzed CVD Grown One Dimensional Cubic-SiC Nanostructures.

Afzal Khan,Kun Huang,Ming Hu,Xuegong Yu,Deren Yang

DOI: https://doi.org/10.1021/acs.langmuir.8b00238

IF: 3.9

2018-01-01

Langmuir

Abstract:Superhydrophobic surfaces can be fabricated by using the self-assembled nanoarchitecture of 3C-SiC one-dimensional (1D) nanostructures as they are capable of forming a dense network of micro-nano air pockets without any help from external sources. Herein, the metal-catalyzed growth of 3C-SiC nanowires/nanorods on Si substrates via vapor-liquid-solid mechanism using five different catalysts, that is, chemically synthesized Au nanoparticles and direct current-sputtered thin films of Au, Cu, Ni, and Ti, is reported. Relatively new or unexplored catalysts such as thin films of Cu and Ti, as well as drop-cast Au nanoparticles, were used. An optimized and separate growth was carried out for each catalyst in an inductively heated horizontal cold-wall atmospheric pressure chemical vapor deposition reactor. An insight into the catalytic growth mechanism of 3C-SiC 1D nanostructures has been presented. All of the bare samples exhibited superhydrophilic behavior, whereas hierarchical Au/Pd nanostructure-coated 3C-SiC nanorod samples grown using Au and Ni thin-film catalysts exhibited hydrophobic and superhydrophobic behavior, respectively. As the better results were obtained for Ni thin-film catalysts in terms of growth density and high water contact angle (WCA approximate to 160 degrees), therefore, the growth temperature, as well as the growth time-dependent wetting behavior, was also studied. It was found that the WCA increased as the growth time and temperature increased because of the increase in the growth density, and it finally reached to an optimum value at the growth temperature of 1200 degrees C and the growth time of 1 h. Furthermore, their wetting behavior was studied by using a variety of high surface tension (water, milk, tea, and glycerin) and low surface tension (organic liquids such as n-hexane, ethanol, etc.) liquids. High surface tension liquids exhibited superhydrophobic behavior, whereas low surface tension liquids exhibited superhydrophilic behavior. Hence, these fabricated nanostructured surfaces can be exploited for oil-water separation, electrowetting, water harvesting, self-cleaning, lab on a chip, and micro-/nanofluidic device applications.
Spontaneous infiltration and wetting behaviors of a Zr-based alloy melt on a porous SiC substrate

Bo Zhang,Wen Li,Hong Li,Hai-feng Zhang

DOI: https://doi.org/10.1007/s12613-018-1630-7

2018-01-01

Abstract:The spontaneous infiltration and wetting behaviors of a Zr-based alloy melt on porous a SiC ceramic plate were studied using the sessile drop method by continuous heating and holding for 1800 s at different temperatures in a high-vacuum furnace. The results showed that the Zr-based alloy melt could partly infiltrate the porous SiC substrate without pressure due to the effect of capillary pressure. Wettability and infiltration rates increased with increasing temperature, and interfacial reaction products (ZrC 0.7 and TiC) were detected in the Zr-based alloy/SiC ceramic system, likely because of the reaction of the active elements Zr and Ti with elemental C. Furthermore, the redundant element Si diffused into the alloy melt.
Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Yue Gao,Quan Xie,Tinghong Gao,Wensheng Yang,Lianxin Li,Yutao Liu,Qian Chen,Zean Tian,Yongchao Liang,Qingquan Xiao

DOI: https://doi.org/10.1016/j.surfin.2023.103600

IF: 6.2

2023-11-09

Surfaces and Interfaces

Abstract:Recently, researchers have increasingly used computational modeling and simulation techniques to comprehend the atomic layer deposition (ALD) process, design novel microstructures, and create heterogeneous interfaces. Thin-film growth has emerged as a method for fabricating devices with excellent surface properties. To effectively optimize device performance, it is essential to comprehend the thin-film growing process. Based on a series of molecular dynamics (MD) simulations and analysis of the crystal structure, dislocation distribution, surface morphology, roughness, and interfacial strain distribution of the deposited films with different substrate crystalline planes and incident kinetic energies, how different crystalline planes of a cubic silicon carbide 3C-SiC substrate affect the quality and morphology of Cu thin films is investigated. In addition, a method is proposed to classify the deposited atoms into TOP and GAP positions, which can be explored for interface matching. The statistical analysis revealed that the (1 1 1)-C-terminal model exhibits an optimal interface compared to other models. Furthermore, a moiré pattern formed during the deposition process in the (1 1 1)-Si-terminal model.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

Changming Fang,Zhongyun Fan

DOI: https://doi.org/10.3390/met14111258

IF: 2.695

2024-11-07

Metals

Abstract:Silicon carbide (SiC) has been widely added into light metals, e.g., Al, to enhance their mechanical performance and corrosion resistance. SiC particle-reinforced metal matrix composites (SiC-MMCs) exhibit low weight/volume ratios, high strength/hardness, high corrosion resistance, and thermal stability. They have potential applications in aerospace, automobiles, and other specialized equipment. The macro-mechanical properties of Al/SiC composites depend on the local structures and chemical interactions at the Al/SiC interfaces at the atomic level. Moreover, the added SiC particles may act as potential nucleation sites during solidification. We investigate local atomic ordering and chemical interactions at the interfaces between liquid Al (Al(l) in short) and polar SiC substrates using ab initio molecular dynamics (AIMD) methods. The simulations reveal a rich variety of interfacial interactions. Charge transfer occurs from Al(l) to C-terminating atoms (Δq = 0.3e/Al on average), while chemical bonding between interfacial Si and Al(l) atoms is more covalent with a minor charge transfer of Δq = 0.04e/Al. The prenucleation at both interfaces is moderate with three to four recognizable layers. The information obtained here helps increase understanding of the interfacial interactions at Al/SiC at the atomic level and the related macro-mechanical properties, which is helpful in designing novel SiC-MMC materials with desirable properties and optimizing related manufacturing and machining processes.

materials science, multidisciplinary,metallurgy & metallurgical engineering
A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Xinming Xing,Takeshi Yoshikawa,Olga Budenkova,Didier Chaussende

DOI: https://doi.org/10.1007/s10853-021-06816-y

IF: 4.5

2022-01-01

Journal of Materials Science

Abstract:Accurate description, understanding and control of the high temperature interface behavior between the SiC single crystal and liquid phase is critical for further development of SiC solution growth. The different parameters which create morphological instabilities, such as step bunching, micro-faceting and solvent trapping, remain unclear because they are very difficult to address in high temperature experiments. We combined experiments and numerical simulation to design a specific sessile drop approach where the liquid is removed before cooling down. The advantage of this method that it activates or suppresses the solute (carbon) transport by an AC magnetic field and thus separates the physical–chemical and hydrodynamic contributions. The method was demonstrated through observation of the morphological evolution of a 4°off 4H-SiC (0001) surface in contact with pure liquid silicon at 1600 °C according to the time factor. Several parasitic effects were also analyzed and suppressed in order to obtain a well-controlled uniform interface.

materials science, multidisciplinary
Experimental Investigation of the Sedimentation Behavior of Metal Droplets in Liquid–liquid Systems

Lijuan Qian,Wenwen He,Jingqi Liu,Chenlin Zhu,Fang Zhou,Hang Ding,Jianzhong Lin

DOI: https://doi.org/10.1063/5.0135636

IF: 4.6

2023-01-01

Physics of Fluids

Abstract:The accurate sedimentation of metal droplets is of great importance in metal droplet-based three-dimensional printing. Detailed investigations of the process of metal droplet collision in a liquid–liquid system are still lacking, relative to studies on the atmospheric environment. In this study, the dynamics of the sedimentation behavior of metal droplets in a liquid–liquid system are experimentally investigated using a high-speed imaging system. The experimental results showed that with an increased impact velocity, metal droplets successively appear after the collision as coalescence, coalescence accompanied by rebound, and rebound. There is a critical impact velocity between the rebound and coalescence, which is related to the surface tension and droplet size of the metal droplets. Analysis of the mechanism of coalescence showed that mechanical oscillations occur during coalescence, which leads to a variation in the inherent surface tension. The greater the impact velocity, the greater the variation. In addition, a semi-empirical prediction formula for the Weber number and maximum spreading factor in the coalescence of metal droplets is developed. This work provides an improved theoretical understanding and superior practical printing efficiency and quality.
Wetting behavior of Al on the surface of SiC textured by nanosecond laser

Zhenxing Fan,Jian Zhao,Jun Yin,Daijun Hu,Wei Fu,Hua Yan,Xiaoguo Song

DOI: https://doi.org/10.1016/j.optlastec.2021.107596

2022-02-01

Abstract:Recently ultrafast laser has been used to process materials to obtain functional surface. However, most of the existing research is focused on metals, and only a few studies considered ceramics. In the current work, the effects of laser texturing on the wetting behavior of Al/SiC systems is investigated by modified sessile drop method. The surface of SiC is textured by nanosecond laser with ordered square grids. Then, the wetting behaviors of Al on both raw and textured SiC are investigated. The processed SiC surface and wetting interface are characterized by XPS, SEM, and XRD. Finally, the spreading kinetics is calculated. It is observed that laser texturing induces the melting and elimination of SiC, resulting in the generation of microsynapses and deposited carbon in grooves. The microstructure and chemical composition enhance the interfacial reaction, which results in faster spreading speed (spreading kinetics kr increases from 0.0041 to 0.011 at 1273 K) and higher wettability (final contact angle θ decreases from 78° to 42°). In addition, a considerably lower activation energy of spreading (164 kJ/mol) is obtained. The results demonstrate that laser processing is an effective method to enhance the wettability of metals on ceramics.

optics,physics, applied
Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Qing Xu,Yu-Xing Li,Xiao-Ning Li,Jia-Bin Wang,Fan Yang,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1142/s0217984917500555

2017-01-01

Modern Physics Letters B

Abstract:Deposition of silicon dioxide in high-density plasma is an important process in integrated circuit manufacturing. A software named CFD-ACE was used to simulate the mechanism of plasma in the chamber of plasma enhanced chemical vapor deposition (PECVD) system, and the evolution of the feature profile was simulated based on CFD-TOPO. Simulation and experiment of silicon dioxide that deposited in SiH4/N2O mixture by PECVD system was researched. The particle density, energy and angular distribution in the chamber were simulated and discussed. We also studied how the depth/width ratio affected the step coverage of the trench and analyzed the deposition rate of silicon dioxide on the feature scale. X-ray photoelectron spectroscopy (XPS) was used to analyze the elemental composition of thin films. Images of the feature profiles were taken by scanning electron microscope (SEM). The simulation results were in good agreement with experimental, which could guide the semiconductor device manufacture.
Interface structure and wetting behaviour of Cu/Ti3SiC2 system

j r lu,yan zhou,yun zheng,h y li,s b li

DOI: https://doi.org/10.1179/1743676114Y.0000000185

2015-01-01

Advances in Applied Ceramics

Abstract:Wetting behaviour of a Cu/Ti3SiC2 system was investigated by the sessile drop technique under a vacuum atmosphere. Contact angles between Cu and Ti3SiC2 changed from 95 to 15 degrees as temperatures increased from 1089 to 1270 degrees C. Two distinct reaction layers consisting of different contents of Cu, TiCx, Ti3SiC2 and CuxSiy intermetallics were formed at the interface of Cu and Ti3SiC2. The formation of the interface layers contributes to the improvement of the wettability of the system. The dissolution of Si from theTi(3)SiC(2) into the molten Cu at high temperature plays a dominant role in the wetting behaviour of Cu/Ti3SiC2 systems.
Transient Spreading of Water Droplet on Laser Micro-Structured SiC Surfaces

Chunhong Ma,Shaoxian Bai,Xudong Peng,Yonggang Meng

DOI: https://doi.org/10.1016/j.apsusc.2014.05.168

IF: 6.7

2014-01-01

Applied Surface Science

Abstract:The transient spreading behavior of water droplet is investigated on micro-structured SiC surfaces. Two types of texture, micro-convexes and micro-grooves, are prepared by laser processing method on SiC (silicon carbide) surfaces. And the evolution of contact angle over time is recorded by a high speed CCD. The results show that the initial transient spreading is rapid and the time to reach the equilibrium contact angle is much longer on the smooth surface than on the textured surfaces. Among the testing textured surfaces, the drop-spreading is fastest in the perpendicular direction on the grooved surface. (C) 2014 Elsevier B.V. All rights reserved.
Coalescence Mechanism Induced by Different Wetting States of Ti and Al Droplets on Rough Surfaces

Zhichao Li,Ruopu Zhao,Tao Li,Wenlong Liu,Qingshui Liu,Mengshuang Fu,Jifeng Tang,Weikang Wu,Hui Li

DOI: https://doi.org/10.1021/acs.langmuir.4c02841

IF: 3.9

2024-10-29

Langmuir

Abstract:There is currently increasing interest in droplet transportation and coalescence on rough surfaces. However, the relationship among wettability, coalescence mode, and substrate characteristics (roughness and nanopillar height) remains unclear. In this work, two coalescence modes, climbing coalescence and contacting coalescence, are first observed in the dynamic behaviors of Ti and Al droplets on rough substrates. Due to the nonsynchronized wetting state transition of the droplets, the coalescence mode with increasing substrate characteristics differs, transitioning from contacting coalescence to climbing coalescence and then returning to the contacting mode. In general, the mode of coalescence correlates closely with the respective wetting states. Typically, Ti and Al droplets coalesce in the contacting mode when they have the same wetting state, but if they have different wetting states, they coalesce in the climbing mode. Our results emphasize the complicated relationship between the surface structure and the wettability of droplets, which could provide insights into self-assembly, three-dimensional printing, and microfluidic devices.
The Transitional Wettability on Bamboo-Leaf-like Hierarchical-Structured Si Surface Fabricated by Microgrinding

Ping Li,Jinxin Wang,Jiale Huang,Jianhua Xiang

DOI: https://doi.org/10.3390/nano12162888

2022-08-22

Abstract:Stabilizing the hydrophobic wetting state on a surface is essential in heat transfer and microfluidics. However, most hydrophobic surfaces of Si are primarily achieved through microtexturing with subsequent coating or modification of low surface energy materials. The coatings make the hydrophobic surface unstable and impractical in many industrial applications. In this work, the Si chips’ wettability transitions are yielded from the original hydrophilic state to a stable transitional hydrophobic state by texturing bamboo-leaf-like hierarchical structures (BLHSs) through a diamond grinding wheel with one-step forming. Experiments showed that the contact angles (CAs) on the BLHS surfaces increased to 97° and only reduced by 2% after droplet impacts. This is unmatched by the current texturing surface without modification. Moreover, the droplets can be split up and transferred by the BLHS surfaces with their 100% mass. When the BLHS surfaces are modified by the low surface energy materials’ coating, the hydrophobic BLHS surfaces are upgraded to be superhydrophobic (CA > 135°). More interestingly, the droplet can be completely self-sucked into a hollow micro-tube within 0.1 s without applying external forces. A new wetting model for BLHS surfaces based on the fractal theory is determined by comparing simulated values with the measured static contact angle of the droplets. The successful preparation of the bamboo-leaf-like Si confirmed that transitional wettability surfaces could be achieved by the micromachining of grinding on the hard and brittle materials. Additionally, this may expand the application potential of the key semiconductor material of Si.
Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Xiaoqi Li,Songmei Yuan,Ning Zhou,Jiayong Wei,Mengxuan Gao,Tianrui Hu,Xiaojin Shi

DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.04.066

IF: 5.7

2024-05-01

Journal of the European Ceramic Society

Abstract:SiC/SiC (Silicon Carbide fiber reinforced Silicon Carbide) is widely used in aerospace and gas turbine fields due to its excellent resistance to high temperature, corrosion and low density. However, the difficult processing of SiC/SiC is the main factor limiting its further application. To address these issues, this paper proposes a novel method for processing SiC/SiC using femtosecond laser combined with dynamic wet etching. A comparative analysis of the micro-pore morphology and elemental composition obtained through processing in air, water, and NaOH solution is presented. Demonstrates the excellent surface quality achieved with NaOH processing, which effectively reduces defects such as recast layers and microcracks. The results suggest that the operating mechanism involves the combined effects of a wet-oxygen coupling environment, high-temperature decomposition, localized chemical wet etching, and the influence of the liquid layer.

materials science, ceramics
Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Zhenzhen Kong,Yanpeng Song,Hailing Wang,Xiaomeng Liu,Xiangsheng Wang,Jinbiao Liu,Ben Li,Jiale Su,Xinguang Tan,Qingjie Luan,Hongxiao Lin,Yuhui Ren,Yiwen Zhang,Jingxiong Liu,Junfeng Li,Anyan Du,Henry H. Radamson,Chao Zhao,Tianchun Ye,Guilei Wang

DOI: https://doi.org/10.1021/acsami.3c14168

IF: 9.5

2023-11-22

ACS Applied Materials & Interfaces

Abstract:SiGe/Si multilayer is the core structure of the active area of gate-all-around field-effect transistors and semiconductor quantum computing devices. In this paper, high-quality SiGe/Si multilayers have been grown by a reduced-pressure chemical vapor deposition system. The effects of temperature, pressure, interface processing (dichlorosilane (SiH(2)Cl(2), DCS) and hydrogen chloride (HCl)) on improving the transition thickness of SiGe to Si interfaces were investigated. The interface quality was...

materials science, multidisciplinary,nanoscience & nanotechnology
Evolution of surface droplets and flow patterns on C/SiC during thermal ablation

Yunlong Tang,Mengkun Yue,Xufei Fang,Xue Feng

DOI: https://doi.org/10.1016/j.jeurceramsoc.2019.05.037

IF: 5.7

2019-01-01

Journal of the European Ceramic Society

Abstract:Degradation of high temperature ceramics caused by thermal ablation is a great challenge for maintaining structural integrity and stability under service conditions. In order to advance the understanding of the thermal ablation mechanisms of C/SiC composites, we adopt here the optical observation system to visualize the surface evolution of C/SiC in wind-tunnel test, and demonstrate experimentally the various flow characteristics of liquid SiO2 generated on the sample surface at different temperatures. Three different flow patterns (droplet flow, stream flow, and liquid film flow) corresponding to 1600 ℃, 1750 ℃, and 1950 ℃ were observed on the sample surface. Numerical simulation shows that the radius of the droplets plays a critical role in determining the flow patterns, as evidenced by the experiments. Droplets with large radius (≥0.5 mm) deform severely and cause “tailing”; droplets with small radius deform little under shear. We also observe that the large SiO2 droplet will continuously break into small droplets and eventually the droplets will oscillate with a certain radius. With the ablation rate increasing, a large number of droplets merge with each other to form a liquid film, and periodic K-H (Kelvin-Helmholtz) instability occurs at the gas-liquid interface.
Droplet Impact-Induced Molten Pool Dynamics and Particle Migration Patterns During TIG-assisted Droplet Deposition Manufacturing of SiC Particle-Reinforced Al–Si Alloy

Jun Du,Yunxiao Wu,Daqing Wang,Minbo Jiang,Zhengying Wei

DOI: https://doi.org/10.1016/j.csite.2022.101962

2021-01-01

SSRN Electronic Journal

Abstract:A three-dimensional droplet-pool coupled model with dispersed phase was developed to simulate the TIG-assisted droplet deposition manufacturing (DDM) of silicon carbide (SiC) particle-reinforced aluminum (Al) matrix composites (AMCs), which was employed to calculate the surface morphology of the deposited layer, the thermal-flow fields and the distribution state of reinforcing particles in the molten pool. The cross-section profile of a single-track SiC-reinforced AMC deposit and the distribution state of reinforcements were examined and compared with the findings predicted by simulation, a good agreement was achieved. It is found that the falling Al droplet produces an obvious crater on the curved surface of molten pool. The viscous damping and simultaneous solidification are the main factors that dissipate the kinetic energy of the droplet. In addition, we discuss quantitatively how impact-induced thermodynamic within molten pool can change the migration behaviors and the distribution state of SiC reinforcement. The heterogeneous distribution of reinforcement particles can be attributed to the thermocapillary micro-convection and the velocity difference in the spreading and recoiling stages.
Study on the High Speed Chemical Vapor Deposition for SiC Coating

Zhao Zhang

2004-01-01

Abstract:A method of high speed CVD for SiC coating has been introduced and the effects of technical condition on the deposition process has also been discussed in this paper.The results show that the high speed deposion for SiC coating can be achieved by using the system of SiC_4+CH_4.Although the purity of SiC coating obtained by the method is not very high,SiC coating is very suitable in application of burning proof coating.
Surface Roughness Analysis of Cu Films Deposited on Si Substrates: A Molecular Dynamic Analysis

Zhiqiang Chen,Yunqi Cao,Wenchao Tian,Yongkun Wang

DOI: https://doi.org/10.1063/1.5095139

IF: 2.877

2019-01-01

Journal of Applied Physics

Abstract:Cu is a promising material to replace Al and Au in integrated circuits and microscale devices because of its low electrical resistivity, high electromigration resistance, and low cost. However, surface roughness affects the contact resistance of these devices, especially when the device is on a microscale or nanoscale. This paper focuses on surface roughness analysis of Cu films deposited on Si substrates by molecular dynamic simulation based on the mechanism of physical vapor deposition. The effects of film thickness, deposition temperature, deposition interval, and reflow temperature on the surface roughness of Cu films are studied in detail. The simulation results show that the surface roughness can be improved by appropriate adjustments of these parameters. They also provide a foundation for further work on the deposition of Cu films on Si substrates.
Reactive wetting and interfacial reaction mechanism of ZrC-SiC ceramic and Ag-Zr filler

Junmiao Shi,Qian Wang,Fuqiang Tian,Lixia Zhang,Xiancheng Zhang

DOI: https://doi.org/10.1016/j.jeurceramsoc.2021.08.016

IF: 5.7

2021-12-01

Journal of the European Ceramic Society

Abstract:In this study, the isotherm wetting and spreading behaviors of molten Ag-Zr filler on ZrC-SiC ceramic surface was investigated using a sessile drop method in vacuum. The effect of Zr content in Ag-Zr filler on the wetting behavior was studied, and the wetting mechanism was revealed in details. The results showed that the contact angle of Ag-Zr filler on the ZrC-SiC surface decreased from 140 ° to 20 ° with the Zr content varied from 0 to 8 wt.%, and the Zr was the key factor to the wetting process. The wetting dynamic analysis illustrated that the interfacial reaction controlled the wetting of Ag-Zr filler on the ZrC-SiC surface. Due to the Zr activity difference at Ag-Zr/ZrC interface, the ZrC released C into Ag-Zr filler, and reacted with Zr to form new-born ZrC with higher Zr content. The formation of the new-born ZrC promoted wetting and spreading of Ag-Zr filler on ZrC-SiC surface.

materials science, ceramics

Investigation of Al droplet wetting behavior on highly-oriented SiC

Study of the 3C-SiC surface crystalline orientation effect on the wettability of molten aluminium droplets by molecular dynamics simulation

Wetting Behavior of Metal Catalyzed CVD Grown One Dimensional Cubic-SiC Nanostructures.

Spontaneous infiltration and wetting behaviors of a Zr-based alloy melt on a porous SiC substrate

Investigation of interfacial matching between 3C-SiC substrate crystals and its surface layer deposited Cu elements using molecular dynamics simulations

Crystal Chemistry at Interfaces Between Liquid Al and Polar SiC{0001} Substrates

A sessile drop approach for studying 4H-SiC/liquid silicon high-temperature interface reconstructions

Experimental Investigation of the Sedimentation Behavior of Metal Droplets in Liquid–liquid Systems

Wetting behavior of Al on the surface of SiC textured by nanosecond laser

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Interface structure and wetting behaviour of Cu/Ti3SiC2 system

Transient Spreading of Water Droplet on Laser Micro-Structured SiC Surfaces

Coalescence Mechanism Induced by Different Wetting States of Ti and Al Droplets on Rough Surfaces

The Transitional Wettability on Bamboo-Leaf-like Hierarchical-Structured Si Surface Fabricated by Microgrinding

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Interface Investigation on SiGe/Si Multilayer Structures: Influence of Different Epitaxial Process Conditions

Evolution of surface droplets and flow patterns on C/SiC during thermal ablation

Droplet Impact-Induced Molten Pool Dynamics and Particle Migration Patterns During TIG-assisted Droplet Deposition Manufacturing of SiC Particle-Reinforced Al–Si Alloy

Study on the High Speed Chemical Vapor Deposition for SiC Coating

Surface Roughness Analysis of Cu Films Deposited on Si Substrates: A Molecular Dynamic Analysis

Reactive wetting and interfacial reaction mechanism of ZrC-SiC ceramic and Ag-Zr filler