Abstract:The optimization of back contact interface is crucial to improve the performance of Cu2ZnSnS4 (CZTS) thin film solar cells. In this paper, we first employ Al-doped ZnO (AZO) as the intermediate layer into the Mo/CZTS interface to improve the quality of back contact region. This AZO intermediate layer, obtained from the sputtering method prior to the CZTS precursor deposition, initially blocks the direct contact of CZTS with the Mo layer and thus indeed suppresses the decomposition reaction between Mo and CZTS. Consequently, the generation of voids at the back contact region is obviously avoided. Besides, the AZO intermediate layer can inhibit the reaction between sulfur (S) and Mo during sulfurization process, and thus significantly reduce the thickness of MoS2. Meanwhile, the AZO intermediate layer with suitable thickness does not affect the crystal quality of CZTS absorber layer. Moreover, the effects of different thicknesses of predeposited AZO on the film morphology, composition, and corresponding device performance were systematically studied. After optimizing the thickness of the AZO layer, the efficiency of the resultant device has increased from 7.1% to 8.4% (the active area efficiency is 9.2%).The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c18799?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c18799</a>.XRR patterns of 15, 30, 45, and 60 nm AZO films deposited on SLG; relevant formula and description of how to calculate the film thickness from XRR mode of XRD; EDS mapping for surface of four CZTS films with 0 nm AZO, 10 nm AZO, 20 nm AZO, and 30 nm AZO and EDS mapping for cross-sectional of CZTS films with 30 nm AZO; statistical box charts of typical parameters of CZTS devices with different thicknesses of AZO at back contact region; cross-sectional SEM images of four CZTS devices with different thicknesses of AZO at back contact region; and comparison of different intermediate layers for CZTS cells (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c18799/suppl_file/am0c18799_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Role of Surface Microstructure of Mo Back Contact on Alkali Atom Diffusion and Ga Grading in Cu(In,Ga)Se2 Thin Film Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Alkali Incorporation into Cu(In,Ga)Se2 Determined by Crystal Orientation of Mo Back Contact: Implications for Highly Efficient Photovoltaic Devices

Study of molybdenum back contact layer to achieve adherent and efficient CIGS2 absorber thin-film solar cells

Significant Passivation Effect of Cu(In, Ga)Se 2 Solar Cells via Back Contact Surface Modification Using Oxygen Plasma

Molybdenum Thin Films Fabricated by Rf and Dc Sputtering for Cu(In,Ga)Se-2 Solar Cell Applications

Effect of Cu content in CIGSe absorber on MoSe2 formation during post-selenization process

V-Oc Enhancement of Sub-Micron Cigs Solar Cells by Sulfization of the Mo Surface

Review on Substrate and Molybdenum Back Contact in CIGS Thin Film Solar Cell

Comparative Study on Effect of Mo–Cr Bilayer and Mo Back Electrodes on Performance of Cu2ZnSn(S, Se)4 Solar Cell

Modification of Back Contact in Cu 2 ZnSnS 4 Solar Cell by Inserting Al-Doped ZnO Intermediate Layer

Ultrathin Cu(In,Ga)Se2 Solar Cells with a Passivated Back Interface: A Comparative Study Between Mo and In2O3:Sn Back Contacts

Ultrathin Cu(In,Ga)Se 2 Solar Cells with a Passivated Back Interface: A Comparative Study between Mo and In 2 O 3 :Sn Back Contacts

Improvement of Ag(In,Ga)Se2/Mo Interface and Solar Cell Performance by Preselenization of the Mo Back Contact

Revealing Surface and Interface Evolution of Molybdenum Nitride as Carrier-Selective Contacts for Crystalline Silicon Solar Cells

Back Contact Engineering to Improve CZTSSe Solar Cell Performance by Inserting MoO3 Sacrificial Nanolayers

Preparation and Characteristics of MoSe2 Interlayer in Bifacial Cu(In,Ga)Se2 Solar Cells

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Enhancing Photocurrent of Cu(In,Ga)Se2 Solar Cells with Actively Controlled Ga Grading in the Absorber Layer

Impact of graded CIGS absorber layer on Cd-free CIGS thin-film solar cell performance: Numerical optimization