Modification of Back Contact in Cu 2 ZnSnS 4 Solar Cell by Inserting Al-Doped ZnO Intermediate Layer

Xiaoshuang Lu,Bin Xu,Xiatong Qin,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
DOI: https://doi.org/10.1021/acsami.0c18799
2020-12-17
Abstract:The optimization of back contact interface is crucial to improve the performance of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) thin film solar cells. In this paper, we first employ Al-doped ZnO (AZO) as the intermediate layer into the Mo/CZTS interface to improve the quality of back contact region. This AZO intermediate layer, obtained from the sputtering method prior to the CZTS precursor deposition, initially blocks the direct contact of CZTS with the Mo layer and thus indeed suppresses the decomposition reaction between Mo and CZTS. Consequently, the generation of voids at the back contact region is obviously avoided. Besides, the AZO intermediate layer can inhibit the reaction between sulfur (S) and Mo during sulfurization process, and thus significantly reduce the thickness of MoS<sub>2</sub>. Meanwhile, the AZO intermediate layer with suitable thickness does not affect the crystal quality of CZTS absorber layer. Moreover, the effects of different thicknesses of predeposited AZO on the film morphology, composition, and corresponding device performance were systematically studied. After optimizing the thickness of the AZO layer, the efficiency of the resultant device has increased from 7.1% to 8.4% (the active area efficiency is 9.2%).The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c18799?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c18799</a>.XRR patterns of 15, 30, 45, and 60 nm AZO films deposited on SLG; relevant formula and description of how to calculate the film thickness from XRR mode of XRD; EDS mapping for surface of four CZTS films with 0 nm AZO, 10 nm AZO, 20 nm AZO, and 30 nm AZO and EDS mapping for cross-sectional of CZTS films with 30 nm AZO; statistical box charts of typical parameters of CZTS devices with different thicknesses of AZO at back contact region; cross-sectional SEM images of four CZTS devices with different thicknesses of AZO at back contact region; and comparison of different intermediate layers for CZTS cells (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c18799/suppl_file/am0c18799_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology
What problem does this paper attempt to address?