Effect of Hydrogen Etching on the Electrical Prosperities of Nanocrystalline Diamond Film

Zilong Zhang,Jian Huang,Xinyu Zhou,Yifan Xi,Ke Tang,Linjun Wang
DOI: https://doi.org/10.1016/j.matlet.2019.03.049
IF: 3
2019-01-01
Materials Letters
Abstract:The nanocrystalline diamond (NCD) were synthesized on silicon substrates by a hot filament chemical vapor deposition (HFCVD) method with varying hydrogen plasma etching time. The hydrogen etching effect on the characteristics of current-voltage, capacitance-frequency and dielectric loss-frequency have been studied. It was founded that the dark current decreased with the etching time. The dielectric properties based on NCDs can be improved with the increasing in etching time, indicating sample with 3 h hydrogen etching exhibited dielectric constant closed to intrinsic diamond and low dielectric loss. The hydrogen etching treatment can provide a feasible approach to enhance the dielectric property of NCD. (C) 2019 Elsevier B.V. All rights reserved.
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