Abstract:Many nanoporous Si structures, including those formed by common electrochemical etching procedures, produce a uniformly etched nanoporous surface. If the electrochemical etch rate is slowed down, details of the etch process can be explored and process parameters may be varied to test hypotheses and obtain controlled nanoporous and defect structures. For example, after electrochemical etching of heavily n-doped (R = 0.05-0.5 Omega.cm) silicon (100 single crystals at a current density of 10 mA cm(-2) in buffer oxide etch (BOE) electrolyte solution, defect craters containing textured nanopores were observed to occur in ring-shaped patterns. The defect craters apparently originate at the hydrogen/BOE bubble interface, which forms during hydrogen evolution in the reaction. The slower hydrogen evolution due to low current density and high BOE viscosity allows sufficient bubble residence time so that a high defect density appears at the bubble edges where local reaction rates are highest. Current-carrying Si-OH species are most likely responsible for the widening of the craters. Reducing the defect/doping density in silicon lowers the defect concentration and thereby the density of nanopores. Measurements of photoluminescence lifetime and intensity show a distinct feature when the few nanopores formed at the ring edges are isolated from each other. Overall features observed in the photoluminescence intensity by XPS strongly emphasize the role of surface oxide that influences these properties. Copyright (c) 2005 John Wiley & Sons, Ltd.

On the Mechanism of the Micro-Droplet Etching of Silicon Wafers for Texturization

Effect of Roughness and Wettability of Silicon Wafer in Cavitation Erosion

A Metal-Free Additive Texturization Method Used for Diamond-Wire-sawn Multi-Crystalline Silicon Wafers

Toward Controllable Wet Etching of Monocrystalline Silicon: Roles of Mechanically Driven Defects

INFLUENCE OF SUB-SURFACE DAMAGE ON TEXTURING OF MONOCRYSTALLINE SILICON WAFERS FOR SOLAR CELLS

Role of mechanically-driven distorted microstructure in mechanochemical removal of silicon

Effect and Mechanism of Dual-Official Group of Ethanolamines on the Chemical Mechanical Polishing of Monocrystalline Silicon

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

Study of anisotropic etching of (1 0 0) Si with ultrasonic agitation

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

Evaporation and wetting behavior of water on the laser-textured silicon substrate

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Atomistic Mechanisms of Si Chemical Mechanical Polishing in Aqueous H2O2: ReaxFF Reactive Molecular Dynamics Simulations

Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Reactive Molecular Dynamics Simulation of Si Chemical Mechanical Polishing Process

Surface Texture Evolution of Fused Silica in a Combined Process of Atmospheric Pressure Plasma Processing and Bonnet Polishing

Cu-assisted Chemical Etching of Diamond Wire Sawn Multicrystalline Silicon Wafers for Texturing

Wet chemical etching of silicon for conically textured surfaces

Improved Metal Assisted Chemical Etching Method for Uniform, Vertical and Deep Silicon Structure