Chemical Etching Processes at the Dynamic GaAs/Electrolyte Interface in the Electrochemical Direct-Writing Micromachining
Lianhuan Han,Yang Wang,Matthew M. Sartin,Dongping Zhan,Zhong-Qun Tian
DOI: https://doi.org/10.1021/acsaelm.0c00979
IF: 4.494
2021-01-14
ACS Applied Electronic Materials
Abstract:Electrochemical fabrication of functional three-dimensional micro/nanostructures (3D-MNSs) at the wafer scale is important in the semiconductor industry, but it involves complex interfacial reactions. We demonstrated the use of scanning electrochemical microscopy (SECM), a competitive direct-writing micromachining technique, to achieve this by electrochemically induced chemical etching processes on semiconductor wafers. Besides the complex reaction kinetics, the machining accuracy is a function of various parameters, such as the SECM tip size, tip–substrate distance, etching time, the concentration of etchant precursors, and the coupling surface adsorption and passivation on the semiconductor wafer. Here, we investigated the influences of these factors on the machining profiles of etching pits and established a numerical model to predict and control the machining results. Based on the finite element analysis, the unexpected microbulges in the machining process are demonstrated to be caused by the insufficient mass transport and the precipitation of the etching product. The results are instructive for the controllable microfabrication of 3D-MNSs on the semiconductor wafers.
materials science, multidisciplinary,engineering, electrical & electronic