Abstract:Large-scale ab initio simulation methods have been employed to investigate the configurations and properties of defects in SiC. Atomic structures, formation energies and binding energies of small vacancy clusters have also been studied as a function of cluster size, and their relative stabilities are determined. The calculated formation energies of point defects are in good agreement with previously theoretical calculations. The results show that the di-vacancy cluster consists of two C vacancies located at the second nearest neighbor sites is stable up to 1300K, while a di-vacancy with two Si vacancies is not stable and may dissociate at room temperature. In general, the formation energies of small vacancy clusters increase with size, but the formation energies for clusters with a Si vacancy and nC vacancies (VSi–nVC) are much smaller than those with a C vacancy and nSi vacancies (VC–nVSi). These results demonstrate that the VSi–nVC clusters are more stable than the VC–nVSi clusters in SiC, and provide possible nucleation sites for larger vacancy clusters or voids to grow. For these small vacancy clusters, the binding energy decreases with increasing cluster size, and ranges from 2.5 to 4.6eV. These results indicate that the small vacancy clusters in SiC are stable at temperatures up to 1900K, which is consistent with experimental observations.

VACANCY FORMATION INCoSi2ANDNiSi2FROMAB INITIOCALCULATION

VACANCY FORMATION IN CoSi2 AND NiSi2 FROM AB INITIO CALCULATION

VACANCY FORMATION IN <font>CoSi</font><sub>2</sub> AND <font>NiSi</font><sub>2</sub> FROM <i>AB INITIO</i> CALCULATION

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

<title>Ab initio study of electronic properties of CoSi<formula><inf><roman>2</roman></inf></formula> and NiSi<formula><inf><roman>2</roman></inf></formula> in the fluorite structure</title>

Investigation of Vacancy in C54 TiSi2 Using Ab Initio Method

Formation and properties of defects and small vacancy clusters in SiC: Ab initio calculations

First principles study of vacancies in Si

Ab Initio Calculations of the Structural and Elastic Properties of CoSi 2

The Mechanism of Elastic and Electronic Properties of Tungsten Silicide (5/3) with Vacancy Defect from the First-Principles Calculations

Effect of Vacancy Defects and Hydrogen, Oxygen and Nitrogen Atomic Occupation on the Mechanical and Electronic Properties of C40-type VSi2

Ab Initio Calculation of Co2mnsi/Semiconductor (sc, = Gaas, Ge) Heterostructures

Spontaneous Vacancy Array Formation on FeSi2 and CoSi2 Formed on Si(100) 2×n Surface

Insight into the Vacancy Effects on Mechanical and Electronic Properties of V5Si3 Silicides from First-Principles Calculations.

Analysis of the electronic structure of β-SiO2 intrinsic defects based on Density Functional Theory

Theoretical Formation Energy of Oxygen-Vacancies in Oxides

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

First-principles Study of Electronic Structure for CoSi

First-principles investigation of the intrinsic defects in Ti3SiC2

Structure and Effects of Vacancies in Σ3 (112) Grain Boundaries in Si