<title>Ab initio study of electronic properties of CoSi<formula><inf><roman>2</roman></inf></formula> and NiSi<formula><inf><roman>2</roman></inf></formula> in the fluorite structure</title>

Tao Wang,Yong Bin Dai,Shihong Ouyang,Haiping Shen,Jinglei Wu

DOI: https://doi.org/10.1117/12.607375

2004-01-01

Abstract:The lattice structure and electronic properties of perfect CoSi₂ and NiSi₂ have calculated using an ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximations (GGA). Special attention is paid to the formation energies of the vacancy, which largely depend on the atomic chemical potentials of Si and metal atom: in Si-rich limit, the formation energies of Si and Co vacancies are 2.39 eV and 0.56 eV whilst those are 1.53 eV and 2.29 eV in Co-rich limit in CoSi₂, respectively. For NiSi₂, the formation energies of Si and Ni vacancies are 0.56 eV and 1.25 eV in Si-rich limit and those are 0.04 eV and 2.3 eV in Ni-rich limit.