Abstract:Using in situ scanning tunneling microscopy and low-energy electron diffraction, we performed investigations on the growth of zirconium silicide on vicinal and flat Si(111)-7 x 7 surfaces. In the case of a solid-phase reaction, submonolayer zirconium deposition onto vicinal Si followed by successive annealing results in the formation of zirconium silicide nanostructures, which are distributed randomly on the surface. These nanostructures evolved into rod-shaped islands with axes running along the substrate <(1) over bar 10 > directions at the late stage of the coarsening process. When 2-3 monolayers of Zr are deposited on Si at 520 degrees C, an extended network with rod-like silicide domains was developed, which is controlled by the elastic strain-relief mechanism. The atomic structures of these silicide features were identified and they are considered to adopt C49 ZrSi2. The reaction and growth on a flat surface with less Zr coverage at higher temperatures led to the formation of longer and narrower nanowires. The relations between the variety of nanostructures and the different growth conditions are addressed.

Spontaneous Vacancy Array Formation on FeSi2 and CoSi2 Formed on Si(100) 2×n Surface

Co-induced nano-structures on Si(111) surface

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Ab initio study of electronic properties of CoSi2 and NiSi 2 in the fluorite structure

Faceted nanostructure arrays with extreme regularity by self-assembly of vacancies

Formation of ordered arrays of Ag nanowires and nanodots on Si(5 5 7) surface

An atomic force microscopy study of thin CoSi2 films formed by solid state reaction

Array-orderly single crystalline silicon nano-wires

Extensive Raman spectroscopic investigation of ultrathin Co 1-xNi xSi 2 films grown on Si(100)

CoSi2 Formation Using Ti-capping Layer

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

On The Formation Of Inhomogeneities In Epitaxial Cosi2 Layers Grown From The Interaction Of Co/Ti Bilayers With Si<100> Substrates

Vacancy Dependent Structural, Electronic, and Magnetic Properties of Zigzag Silicene Nanoribbons:Co

Growth and Magnetism of Self‐organized Co Nanoplatelets on Si(111) Surface

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates

Engineering metal-$sp_{xy}$ Dirac bands on the oxidized SiC surface

Fabrication and magnetic behaviour of 2D ordered Fe/SiO 2 nanodots array

Fabrication and Mechanism of Α-Fesi2 Nanobars on (001) Silicon Wafer