Abstract:The interaction between dislocations and vacancies at finite temperature is crucial for many physical properties and phenomena in materials, such as vacancy segregation, strengthening effect, dislocation motion, and crystal plasticity. Conventional dislocation-vacancy interaction models use approximations based on elasticity theory and assumption that transition state energy can be deduced from the binding energy of the vacancies. The long-term vacancy diffusion near dislocation and the change of dislocation core induced by vacancy segregation are still difficult to capture. In this paper, we present the theoretical study on diffusion and segregation properties of vacancies near <math>111</math> edge or screw dislocation on slip planes of {110}, {112} and {123} in bcc iron. The calculations are performed with the distribution of vacancy concentration and dislocation-vacancy interaction energy as a function of distance from dislocation core using diffusive molecular dynamics (DMD). Meanwhile, the accompanying effects of the interaction on vacancy segregation, dislocation motion, and crystal plasticity are discussed. The vacancy diffusion near dislocation is a process highly anisotropic and inter-correlated towards equilibrium. The interaction of vacancies with the tensile stress field of edge dislocations is numerically stronger than that with the pure shear stress field of screw dislocations. The Peierls stress are calculated to reflect the effect of the vacancy segregation on dislocation motion. The slip planes of <math>111</math> dislocations have a significant influence on this interaction. With the slip planes changing from {110} to {123} to {112}, the absorption intensity of dislocation to vacancy and the ranges of the "effective interaction region" of both edge and screw dislocation decrease while the ranges of "absorption region" increases gradually. In addition, vacancy segregation produces a regulatory mechanism for the structure of dislocation core and promotes the transformation of dislocations on different slip planes to a more stable intermediate structure. This study visually presents the evolution of vacancies near dislocation, providing fundamental insights on the vacancy transport mechanisms which are essential for understanding dislocation-vacancy interaction, dislocation motion and plasticity of metallic materials.

Structure and Effects of Vacancies in Σ3 (112) Grain Boundaries in Si

First principles study of vacancies in Si

Interactions Between Vacancies and Prismatic Σ3 Grain Boundary in Α -Al 2 O 3 : First Principles Study

Effect of Applied Stress on Vacancy Segregation Near the Grain Boundary in Nickel

Local structure and defect segregation on the tilt grain boundaries in silicon

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Ge-vacancy Pair in Ge-doped Czochralski Silicon

An effect of structural vacancies on the lattice vibration, mechanical, electronic and thermodynamic properties of Cr5BSi3

Energetics of vacancy segregation to symmetric tilt grain boundaries in HCP materials

First-principles study of the effect of vacancies on the interface stability of 3C-SiC/Mg composites based on theoretical physical method

Effect of Structural Vacancies on Lattice Vibration, Mechanical, Electronic, and Thermodynamic Properties of Cr5BSi3

Diffusion mechanisms of vacancy and doped Si in Al3Ti from first-principles calculations

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

The effects of hydrogen and vacancy on the tensile deformation behavior of Σ3 symmetric tilt grain boundaries in pure fe

The effects of defects on the defect formation energy, electronic band structure, and electron mobility in 4H–SiC

Dimer-vacancy–dimer-vacancy Interaction on the Si(001) Surface: the Nature of the 2×Nstructure

Effect of Vacancies on the Nucleation of Cr Precipitates at Grain Boundary in Α-Fe

Molecular Dynamics Simulation of Interaction Between a 60°Dislocation and Vacancy Defects in Si Crystal

The Nature of a Low Angle Grain-Boundary in a Si Bi-Crystal with Added Fe Impurities

Formation and properties of defects and small vacancy clusters in SiC: Ab initio calculations

Atomic modeling of the segregation of vacancies on " open=" 111 dislocations in α-iron by diffusive molecular dynamics simulations