Abstract:Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has gained tremendous research interest over recent years due to its unconventional domain growth morphology, fascinating properties and application potentials as an excellent dielectric layer for 2D-based nano-electronics. However, the unidirectional domain growth of h-BN thin films directly on insulating substrates remains significantly challenging because of high-bonding anisotropicity and complex growth kinetics than the conventional thin films growth, thus resulting in the formation of randomly oriented domains morphology, and hindering its usefulness in integrated nano-devices. Here, ultra-wide bandgap h-BN thin films are grown directly on low-miscut atomically smooth highly insulating c-plane sapphire substrates (without using any metal catalytic layer) by pulsed laser deposition, showing remarkable unidirectional triangular-shape domains morphology. This unidirectional domain growth is attributed to the step-edge guided nucleation caused by reducing the film-substrate interfacial symmetry and energy, thereby breaking the degeneracy of nucleation sites of random domains, as revealed by the density functional theory (DFT) calculations. Through extensive characterizations, we further demonstrate the excellent single crystal-like functional properties of films. Our findings might pave the way for feasible large-area direct growth of electronic-quality h-BN thin films on insulating substrates for high-performance 2D-electronics, and in addition would be beneficial for hetero engineering of 2D-vdW materials with emergent phenomena.

Thickness-tunable growth of ultra-large, continuous and high-dielectric h-BN thin films

Chemical Vapor Deposition Growth of Large-Scale Hexagonal Boron Nitride with Controllable Orientation

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Atomic-Scale Structural and Chemical Characterization of Hexagonal Boron Nitride Layers Synthesized at the Wafer-Scale with Monolayer Thickness Control

Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy

Effect of Flow Rate and Precursor Sublimation Temperature on the LPCVD Growth of Hexagonal Boron Nitride

Unidirectional domain growth of hexagonal boron nitride thin films

Wafer-scale CVD Growth of Monolayer Hexagonal Boron Nitride with Large Domain Size by Cu Foil Enclosure Approach

Growth Dynamics of Millimeter‐Sized Single‐Crystal Hexagonal Boron Nitride Monolayers on Secondary Recrystallized Ni (100) Substrates

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition

A high-throughput synthesis of large-sized single-crystal hexagonal boron nitride on a Cu-Ni gradient enclosure

Large-roll Growth of 25-Inch Hexagonal BN Monolayer Film for Self-Release Buffer Layer of Free-Standing GaN Wafer.

Ultraflat Single-Crystal Hexagonal Boron Nitride for Wafer-Scale Integration of a 2D-Compatible High-Κ Metal Gate

Thickness-Controlled Synthesis of Uniform Hexagonal Boron Nitride Films on Metal Alloys by Chemical Vapor Deposition

Synthesis of Multilayered h-BN Film on the Molten Ni-B and the Influence of Underneath W Substrate

Large-Area Orientation-Controlled Growth of Hexagonal Boron Nitride on Liquid Copper

Thickness-controlled Multilayer Hexagonal Boron Nitride Film Prepared by Plasma-Enhanced Chemical Vapor Deposition

Towards the growth of single-crystal boron nitride monolayer on Cu

Electrical homogeneity of large-area chemical vapor deposited multilayer hexagonal boron nitride sheets