Abstract:1. Introduction Continued shrinking of RF MOSFET gate length leads to thinner silicon oxide film and higher electrical field and thus can results in reliability issues [1]. Previous works to evaluate the RF circuit degradation mainly focused on hot carrier instability (HCI). HCI stress will induce interface states and oxide traps near the drain junction and thus causes the degradation of f t and f max of MOSFETs and circuit failure [2-4]. However, the reliability issue of RF MOSFETs under FN stress which often occurs in some applications, such as RF switcher and passive mixer, has rarely been reported. In these circuits, the drain of the MOSFETs is biased at low voltage and the effect of HCI stress is considerably reduced, and meanwhile MOSFETs mainly suffer a uniform stress in the oxide film, which means FN stress becomes the dominant factor for the degradation of these circuits. The degradation of RF MOSFETs under FN stress is expected to exhibit different characteristics from that under HCI stress due to different physical mechanisms. In this paper, the impacts of FN stress on the RF performance of 130nm MOSFETs are investigated. It is first reported that f t and f max shows different degradation tendency under FN stress. In addition, the gate bias exerts converse influence on the trapped charge generation during stress and the trapped charge impact on the performance degradation induced by FN stress. The optimized gate bias can be obtained when considering the tradeoff between the dependence of RF performance on the gate bias and the generation rate of trapped charges during stress, which can give valuable design guidelines for RF CMOS circuits.

Analysis of SenseFET Performance Degradation under Electric Stress

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

New Observations of FN Stress Induced Performance Degradation of RF MOSFETs

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress

Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV Spectroscopy

Degradation Mechanism of Short Channel P- FinFETs under Hot Carrier Stress and Constant Voltage Stress

The Threshold Voltage Degradation Model of N Channel VDMOSFETs under PBT Stress

Investigation on the Degradation Mechanism for SiC Power MOSFETs Under Repetitive Switching Stress

Degradation of 650 V SiC double-trench MOSFETs under repetitive overcurrent switching stress

Analysis of Algan/Gan High Electron Mobility Transistors Failure Mechanism under Semi-On Dc Stress

Analysis of Abnormal GIDL Current Degradation under Hot Carrier Stress in DSOI-MOSFETs

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests

Correlation between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress test

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

Investigations on the Degradations of Double-Trench SiC Power MOSFETs under Repetitive Avalanche Stress

Terminal Breakdown Voltage Degradation by Avalanche Stress Induced Hot-Hole Injection in Split Gate Trench Power MOSFET

Negative Bias Temperature Instability Characteristics and Degradation Mechanisms of Pmosfet with High-K/Metal Gate Stacks

Investigation on Degradation of SiC MOSFET Under Accelerated Stress in a PFC Converter

Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example