Abstract:In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible shift in the flatband voltage with γ-ray irradiation dose up to 800 krad indicates the superior radiation tolerance of the p-GaN gate structure. The difference between capacitance dispersion at the measurement frequency below and above 500 kHz is observed, which is attributed to trapping effects in different locations with varying gate voltage. Moreover, the frequency-dependent conductance method is put forward to assess the effects of different doses of γ-ray irradiation on the AlGaN/GaN interface traps. Based on that method, aside from the shallow trap states [the trap activation energy (ET) is about 0.334–0.338 eV] previously found in the traditional normally on high electron mobility transistor (HEMT), another type of deeper trap states at the AlGaN/GaN interface (ET is about 0.467–0.485 eV) is detected. It is observed that the ET of shallow trap states distributes at a deeper and broader range as the irradiation dose increases. Additionally, the trap density decreased after 600 krad doses irradiation but increased after 800 krad doses irradiation for both deep and shallow ET. Transmission electron microscopy and atomic force microscopy are used to demonstrate the smooth AlGaN/GaN interface morphology, which will not be greatly damaged after 800 krad doses of γ-ray irradiation. This work can provide a further understanding of radiation tolerance and trapping effects of p-GaN gate HEMTs for low-voltage applications.

Photon Emission and Current-Collapse Suppression of AlGaN/GaN Field-Effect Transistors with Photonic–ohmic Drain at High Temperatures

Characterization of Static and Dynamic Behaviors in AlGaN/GaN-on-Si Power Transistors with Photonic-Ohmic Drain

Impact of Integrated Photonic-Ohmic Drain on Static and Dynamic Characteristics of Gan-On-Si Heterojunction Power Transistors

Iii-Nitride Transistors With Photonic-Ohmic Drain For Enhanced Dynamic Performances

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

The degradation mechanism of high power S-band AlGaN/GaN HEMTs under high temperature

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Enhanced Device Performance Of Algan/Gan High Electron Mobility Transistors With Thermal Oxidation Treatment

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Stable High Temperature Operation of p-GaN Gate HEMT With Etch-Stop Layer

Temperature-Dependent Dynamic Performance of p-GaN Gate HEMT on Si

Thermal Analysis of AlGaN/GaN High-Electron-Mobility Transistor and Its RF Power Efficiency Optimization with Source-Bridged Field-Plate Structure