Abstract:Sapphire is one of the most widely used substrate materials for semiconductor lighting. With the improvement of chemical mechanical polishing (CMP) processing technology for sapphire substrate, mass production, and cost control requires faster polishing efficiency and better surface quality. In CMP, alumina abrasive is widely used for its high polishing rate, but it also has the disadvantages of easy agglomeration and poor polishing quality. Therefore, ethylenediamine tetraacetic acid (EDTA)-grafted alumina composite abrasives were produced by a two-step process for the sapphire substrate CMP. As demonstrated by time of flight secondary ion mass spectrometry and fourier transform infrared spectroscopy, EDTA has been successfully grafted onto the surface of alumina particles. As shown by the scanning electron microscope, particle size distribution, and zeta potential analyses, the modified alumina composite abrasives exhibit superior dispersion properties than pure alumina particles. CMP experiment results show that the material removal rate (MRR) of the alumina composite abrasives can reach up to 2.6 μm/h, and the surface roughness (Sa) of the sapphire substrate can be reduced to 0.89 nm, which is 53 % higher and 66 % lower than pure alumina, respectively. According to X-ray photoelectron spectroscopy, the chemical etch of modified abrasive particles was strengthened, and the complex reaction occurred throughout the CMP process to generate the C–O–Al structural compound. Meanwhile, the friction coefficient test and contact angle test were combined to create the contact wear model. It shows that the addition of EDTA expands the contact area between the composite abrasives and the surface of substrates, improving the mechanical interaction during CMP. The chemical reaction and mechanical action combine and promote each other to enhance the CMP performance.

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Preparation of alumina/silica core-shell abrasives and their CMP behavior

AFM and XPS Studies on Material Removal Mechanism of Sapphire Wafer During Chemical Mechanical Polishing (CMP)

Synthesis of Sm-doped Colloidal SiO2 Composite Abrasives and Their Chemical Mechanical Polishing Performances on Sapphire Substrates

Preparation of Composite Spherical Alumina Nanoparticles and Study on their CMP Performance

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Preparation of Porous Alumina Abrasives with Different Morphologies and their Chemical Mechanical Polishing Behavior

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Preparation of Non-Spherical Silica Composite Abrasives by Lanthanum Ion-Induced Effect and Its Chemical–mechanical Polishing Properties on Sapphire Substrates

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Realization of atomic-level smooth surface of sapphire (0001) by chemical-mechanical planarization with nano colloidal silica abrasives

Preparation of Non-spherical Colloidal Silica Nanoparticle and Its Application on Chemical Mechanical Polishing of Sapphire

Study on Chemical Mechanical Polishing Performances of Sapphire Wafer (0001) Using Silica-Based Slurry

Development of core–shell SiO 2 @A-TiO 2 abrasives and novel photocatalytic chemical machinal polishing for atomic surface of fused silica

Development of Core–shell SiO2@A-TiO2 Abrasives and Novel Photocatalytic Chemical Machinal Polishing for Atomic Surface of Fused Silica

Research on the Polishing Performance of CMP Slurry for the Sapphire Crystal

Chemical mechanical polishing for sapphire wafers using a developed slurry

Preparation of a Novel Catalyst (sofeiii) and Its Catalytic Performance Towards the Removal Rate of Sapphire Substrate During CMP Process

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Effect of EDTA-modified alumina composite abrasive on the CMP performance of sapphire substrate