Abstract:Alloying of semiconductors with similar crystal structures is often used to fine-tune materials properties for optoelectronic applications. However, examples of semiconductor alloys between compounds with two different crystal structures, where properties are changing dramatically as a function of composition, are much rarer. Even more unusual are such heterostructural alloys where the structure and properties can be changed with only a small amount of substitution (<10%). One exception is yttria-stabilized zirconia (YSZ) with cubic fluorite crystal structure, used for a wide range of applications. Here, we report on experimental observation of such unusual behavior in zinc-stabilized manganese telluride (ZSMT), and on theoretical explanation of its compositional stabilization in the wurtzite crystal structure. Thin films of Mn1-xZnxTe alloys synthesized at 400 degrees C change from the nickeline (NC) to the wurtzite (WZ) crystal structure at x as low as 0.08. Theoretical calculations indicate that this structural transition occurs due to small MnTe polymorph energy differences, and strong preference of Zn atoms to adopt tetrahedral vs octahedral coordination environment. The calculated 1 eV increase of the band gap from NC to WZ structure is consistent with the experimental measurements on ZSMT films. These measurements also indicate 1000-10 000 times lower conductivity than the nickeline MnTe, due to low ZSMT hole concentration. Overall, the wide band gap and low hole density make ZSMT a promising candidate for p-type transparent transistors and other optoelectronic applications.

Study of Zn1−xQxTe(Q=Mn, V) Crystals Grown from Te-Rich Solution As Terahertz Emitters and Sensors

Improvement of the Thz Response of Zn1-Xmnxte Bulk Crystals Grown by A Temperature Gradient Solution Method

Enhanced Terahertz Response of Diluted Magnetic Semiconductor Zn1-xMnxTe Crystals

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Molecular Beam Epitaxy and Characterizations of PbTe Grown on GaAs(211) Substrates Using CdTe/ZnTe Buffers

Growth and characterization of ZnTe single crystal via a novel Te flux vertical Bridgman method

Optical phonons scattering study of ZnTe1-xSx alloys grown on GaAs(100) substrate by molecular beam epitaxy

Comparison of ZnTe Bulk Crystals Grown by the Temperature Gradient Solvent Method Using Elemental and Compound Materials

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Laser terahertz emission microscopy revealing the local fluctuation of terahertz generation induced by Te inclusion

Growth of ZnTe crystal via directional solidification method and study of its mechanical properties

Optical Properties of Ii-Vi Diluted Magnetic Semiconductor Znte/Zn(1-X)Mn(X)Te Superlattices

Zinc-Stabilized Manganese Telluride With Wurtzite Crystal Structure

Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric Ge 1- x Sb x Te with Zn-Alloying-Induced Band Alignment.

Growth and Characterization of <110> Oriented ZnTe Single Crystal

Identification of twin and nanoscale Te precipitations in CdZnTe crystals grown by vertical gradient method with HRTEM

Growth of Single-Crystal Cd0.9Zn0.1Te Ingots Using Pressure Controlled Bridgman Method

Band and microstructure engineering toward high thermoelectric performance in SnTe

Molecular Beam Epitaxy, Photoluminescence from Mn2+ Multiplets and Self-Trapped Exciton States of Γ-Mnte Single-Crystalline Thin Films

Simulation, Modeling, and Crystal Growth of Cd0.9Zn0.1Te for Nuclear Spectrometers

Topological Crystalline Insulator Pbxsn1-Xte Thin Films on Srtio3 (001) with Tunable Fermi Levels