Abstract:The direct bandgap found in hexagonal germanium and some of its alloys with silicon allows for an optically active material within the group-IV semiconductor family with various potential technological applications. However, there remain some unanswered questions regarding several aspects of the band structiure, including the strength of the electric dipole transitions at the center of the Brillouin zone. Using the $\mathbf{k\cdot p}$ method near the $\Gamma$ point, including 10 bands, and taking spin-orbit coupling into account, we obtain a self-consistent model that produces the correct band curvatures, with previously unknown inverse effective mass parameters, to describe 2H-Ge via fitting to {\it ab initio} data and to calculate effective masses for electrons and holes. To understand the weak dipole coupling between the lowest conduction band and the top valance band, we start from a spinless 12-band model and show that when adding spin-orbit coupling, the lowest conduction band hybridizes with a higher-lying conduction band, which cannot be explained by the spinful 10-band model. With the help of Löwdin's partitioning, we derive the effective low-energy Hamiltonian for the conduction bands for the possible spin dynamics and nanostructure studies and in a similar manner, we give the best fit parameters for the valance-band-only model that can be used in the transport studies. Finally, using the self-consistent 10-band model, we include the effects of a magnetic field and predict the electron and hole g-factor of the conduction and valance bands.

Multiband K . P Theory of Monolayer Xse (x=in, Ga)

Multiband k∙p theory for monolayer AsP: Symmetry, strain and spin-orbit coupling

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Multiband $k \cdot p$ theory for hexagonal germanium

Strain-dependent Electronic Structure and Optical Properties of Monolayer Indium Selenide: A Density Functional + Tight-Binding Model + Many-Body Perturbation Theory Study

Experimental Determination of Deformation Potentials and Band Nonparabolicity Parameters for PbSe

Tunable electronic and dielectric behavior of GaS and GaSe monolayers.

Uniaxial Hybridization in the Quasi-One-dimensional Kondo Lattice CeCo2Ga8

Scaling Universality Between Band Gap and Exciton Binding Energy of Two-Dimensional Semiconductors

Multiband theory of quantum-dot quantum wells: Dark excitons, bright excitons, and charge separation in heteronanostructures

Band engineering of XBi (X = Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation

Structural, Electronic and Optical Properties of Monolayer InGeX3 (X = S, Se, Te) by First-Principles Calculations

Geometric band properties in strained monolayer transition metal dichalcogenides using simple band structures

INTERSUBBAND ABSORPTION IN P-Type GexSi1-x/Si MULTIPLE QUANTUM WELLS AND ITS ANALYSIS

Interband Magneto-Spectroscopy in Insb Square and Parabolic Quantum Wells

Electronic and optical properties of two-dimensional InSe from a DFT-parameterized tight-binding model

Strain-regulated electronic and optical properties of InSe/WS 2 heterostructure from first-principle calculations

Application of k . p method on band structure of GaAs obtained through joint density functional theory

Efficient band-structure calculations of strained quantum wells

Multiband Theory of Multi-Exciton Complexes in Self-Assembled Quantum Dots

Calculation of the valence band structure in strained In 0.7Ga0.3As devices with different surface orientation