Abstract:Electronic band-gap is a key factor in applying two-dimensional (2D) topological insulators into room-temperature quantum spin Hall effect (QSH) spintronic devices. Employing pseudopotential plane-wave first-principles calculations, we investigate spin-orbit coupling (SOC) electronic structures of the novel 2D topological insulator series of antimony (Sb) and bismuth (Bi) monolayers (isolated double atomic layers) functionalized by organic-groups (methyl, amino and hydroxyl). Cohesive energies and phonon frequency dispersion spectra indicate that these organic-group decorated Sb and Bi monolayers possess structural stability in both energetic statics and lattice dynamics. The giant electronic band-gaps adequate for room-temperature applications are attributed to the effective SOC enhancement of group functionalization. The nontrivial topology of these novel 2D monolayer materials is verified by the Z2 invariant derived from wave-function parity and edge-states of their nanoribbons, which is prospective for QSH spintronic devices. The chemical functional group changes the p-orbital component of Fermi level electrons, leading to strong intra-layer spin-orbit coupling, opening a large band-gap of approaching 1.4 eV at Dirac-cone point and resulting in a global indirect band-gap of 0.75 eV, which, even underestimated, is adequate for room-temperature operations. Sb and Bi monolayers functionalized by organic groups are also predicted to maintain stable nontrivial topology under in-layer biaxial strain, which is suitable for epitaxy technology to realize QSH spintronic devices.

Band engineering of XBi (X = Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation

Effect of vertical strain and in-plane biaxial strain on type-II MoSi<sub>2</sub>N<sub>4</sub>/Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> van der Waals heterostructure

Spin-Orbit Coupling Electronic Structures of Organic-Group Functionalized Sb and Bi Topological Monolayers

Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

Binary Two-Dimensional Honeycomb Lattice with Strong Spin-Orbit Coupling and Electron-Hole Asymmetry.

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

Hybridization gap approaching the two-dimensional limit of topological insulator Bi$_x$Sb$_{1-x}$

Density functional theory study of two-dimensional bismuth selenite: layer-dependent electronic, transport and optical properties with spin-orbit coupling.

Presence of Exotic Electronic Surface States in LaBi and LaSb

Orbital-enhanced Warping Effect in P\textsubscript{x},P\textsubscript{y}-derived Rashba Spin Splitting of Monatomic Bismuth Surface Alloy Surface Alloy

Topological Phase Transition in Sb-doped Mg3Bi2 Monocrystalline Thin Films

Electronic Structures and Surface States of the Topological Insulatorbi1−xsbx

Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals

How Can the Unstable Two-Dimensional Sn2Bi Be Experimentally Realized on Si(111)?

First-Principles Prediction of Graphene-Like XBi (X=Si, Ge, Sn) Nanosheets

Topological phase transition in Sb-doped Mg 3 Bi 2 monocrystalline thin films

Doping Effects Of Sb And Pb In Epitaxial Topological Insulator Bi2se3 Thin Films: An In Situ Angle-Resolved Photoemission Spectroscopy Study

Tailoring electronic properties on Bi$_2$O$_2$Se under surface modification and magnetic doping

Experimental Evidence of Topological Surface States in Mg3Bi2 Films Grown by Molecular Beam Epitaxy

Anisotropic Infrared Response and Orientation-Dependent Strain-Tuning of the Electronic Structure in Nb2SiTe4.

Transport Properties Related to Two-Dimensional Surface States in Gate-Tunable Bi0.1Pb0.9Te Thin Films