Abstract:Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ 2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ 2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs 2 and SZrGeAs 2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP 2 and SZrGeP 2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs 2 monolayer exhibits a hole mobility of up to 597.52 cm 2 s −1 V −1 in the x -direction, whereas the SZrSiP 2 monolayer demonstrates an electron mobility of up to 479.30 cm 2 s −1 V −1 in the y -direction. In the x -direction, the electron mobility of SZrSiAs 2 and SZrGeP 2 monolayers was measured to be 189.88 and 528.44 cm 2 s −1 V −1 , respectively. These values are greater than or equivalent to that of experimentally synthesized MoS 2 (∼200 cm 2 s −1 V −1 ). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus $XA_{2}Y$ ($A$= Si, Sn, Ge; $X,Y$= Sb, Bi) with surface imperfection

Nonlinear Rashba Spin Splitting in Transition Metal Dichalcogenide Monolayers.

Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4-x) family

Current-induced Spin Polarization in Janus WSSe Monolayer

Tunable Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers Via Charge Doping

Spin Hall Effect in the Monolayer Janus Compound MoSSe Enhanced by Rashba Spin-Orbit Coupling

Intraband Lifshitz transition and Stoner ferromagnetism in Janus P A 2 As ( A = Si , Ge , Sn , and Pb) monolayers

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Tunable Rashba Spin Splitting in Two-Dimensional Polar Perovskites.

Electronic states driven by the crystal field in two-dimensional materials: The case of antimonene

Electric field and Strain-induced Band-gap Engineering and Manipulation of the Rashba Spin Splitting in Janus van der Waals Heterostructures

Anisotropic Rashba splitting in Pt-based Janus monolayers PtXY (X,Y = S, Se, or Te)

Prediction of Band Inversion in Janus In2XYZ (X, Y, and Z= S, Se, Te) monolayers

Band engineering of XBi (X = Si, Ge, Sn, and Pb) single layers via strain and surface chemical-modulation

Anisotropy in colossal piezoelectricity, giant Rashba effect and ultrahigh carrier mobility in Janus structures of quintuple Bi2X3(X = S, Se) monolayers

Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers