Abstract:Phonon and spintronic structures of monolayered Janus vanadium-dichalcogenide compounds are calculated by the first-principles schemes of pseudopotential plane-wave based on spin-density functional theory, to study dynamic structural stability and electronic spin-splitting due to spin-orbit coupling (SOC) and spin polarization. Geometry optimizations and phonon-dispersion spectra demonstrate that vanadium-dichalcogenide monolayers possess a high enough cohesive energy, while VSTe and VTe2 monolayers specially possess a relatively higher in-plane elastic coefficient and represent a dynamically stable structure without any virtual frequency of atomic vibration modes. Atomic population charges and electron density differences demonstrate that V–Te covalent bonds cause a high electrostatic potential gradient perpendicular to layer-plane internal VSTe and VSeTe monolayers. The spin polarization of vanadium 3d-orbital component causes a pronounced energetic spin-splitting of electronic-states near the Fermi level, leading to a semimetal band-structure and increasing optoelectronic band-gap. Rashba spin-splitting around G point in Brillouin zone can be specifically introduced into Janus VSeTe monolayer by strong chalcogen SOC together with a high intrinsic electric field (potential gradient) perpendicular to layer-plane. The vertical splitting of band-edge at K point can be enhanced by a stronger SOC of the chalcogen elements with larger atom numbers for constituting Janus V-dichalcogenide monolayers. The collinear spin-polarization causes the band-edge spin-splitting across Fermi level and leads to a ferrimagnetic order in layer-plane between V and chalcogen cations with higher α and β spin densities, respectively, which accounts for a large net spin as manifested more apparently in VSeTe monolayer. In a conclusion for Janus vanadium-dichalcogenide monolayers, the significant Rashba splitting with an enhanced K-point vertical splitting can be effectively introduced by a strong SOC in VSeTe monolayer, which simultaneously represents the largest net spin of 1.64 (ћ/2) per unit cell. The present study provides a normative scheme for first-principles electronic structure calculations of spintronic low-dimensional materials, and suggests a prospective extension of two-dimensional compound materials applied to spintronics.

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Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

Spin-Orbit Coupling and Spin-Polarized Electronic Structures of Janus Vanadium-Dichalcogenide Monolayers: First-Principles Calculations

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Predicted Janus SnSSe monolayer: a comprehensive first-principle study

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Current-induced Spin Polarization in Janus WSSe Monolayer

Prediction of interesting ferromagnetism in Janus semiconducting Cr$_2$AsP monolayer

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

A First-Principles Investigation on Electronic Structure, Optical and Thermoelectric Properties of Janus In2SeTe Monolayer

Hexagonal warping effect in the Janus group-VIA binary monolayers with large Rashba spin splitting and piezoelectricity

First-principles Calculations on the Mechanical, Electronic, Magnetic and Optical Properties of Two-Dimensional Janus Cr_2TeX (X= P, As, Sb) Monolayers

In2Si2S3X3 (X = S, Se, Te) Janus monolayers: From Magnetic Element-Free Spin-Hall Transistor to Sustainable Energy Generation

Engineering Quantum Anomalous Hall Effect in Monolayer Janus MnBi2SexTe4-x

Two-dimensional Rashba semiconductors and inversion-asymmetric topological insulators in monolayer Janus MAA'ZxZ'(4-x) family

Intrinsic and Anisotropic Rashba Spin Splitting in Janus Transition-Metal Dichalcogenide Monolayers

Ab initio prediction of semiconductivity in a novel two-dimensional Sb2X3 (X= S, Se, Te) monolayers with orthorhombic structure

First-principles prediction of ferroelectric Janus Si 2 XY (X/Y = S/Se/Te, X ≠ Y) monolayers with negative Poisson's Ratio