Abstract:The next-generation spintronic device demands the gated control of spin transport across the semiconducting channel through the replacement of the external gate voltage source by the piezo potential, as experimentally demonstrated in Zhu et al. ACS Nano, 2018, 12 (2), 1811-1820. Consequently, a high level of out-of-plane piezoelectricity together with a large Rashba spin splitting is sought after in semiconducting channel materials. Inspired by this experiment, a new hexagonal buckled two-dimensional (2D) semiconductor, ZnTe, and its iso-electronic partner, CdTe, are proposed herewith. These 2D materials show a strong spin-orbit coupling (SOC), which is evidenced by a large Rashba constant of 1.06 and 1.27 eV·Å, respectively, in ZnTe and CdTe monolayers. Moreover, these Rashba semiconductors exhibit a giant out-of-plane piezoelectric coefficient (d33) = 88.68 and 172.61 pm/V, and can thereby generate a high piezo potential for gating purposes in spin field-effect transistors (spin-FETs). While the low elastic stiffness implies the mechanical flexibility or stretchability in these monolayers. The Rashba constants are found to be effectively modulated via external perturbations, such as strain and electric field. The wide band gap provides ample room for modulation in its electronic properties via external perturbations. Such scope is severely limited in previously reported narrow band gap Rashba semiconductors. The fascinating results found in this work indicate their great potential for applications in next-generation self-powered flexible-piezo-spintronic devices. Moreover, a new class of hexagonal buckled ZnX (X: S, Se, or Te) monolayers is proposed herein based on their previously synthesized bulk counterparts, while their electronic, mechanical, piezoelectric, and thermal properties have been thoroughly investigated using the state-of-art density functional theory (DFT).

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Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Rashba spin-splitting and spin Hall effect in Janus monolayers Sb2XSX’ (X, X’= S, Se, or Te; X ≠ X’)

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Tunable Electrical Properties and Multiple-phases of Ferromagnetic GdS2, GdSe2 and Janus GdSSe Monolayers

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Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Prediction of Janus XYSTe (X=Li, Na; Y=Al, Ga, In) monolayers with tunable Rashba effect for spintronic devices

Two-Dimensional Topological Insulator Al 2 SbBi with a Double-Layer Honeycomb Structure with Large Spin Splitting and Piezoelectricity for Spintronic Devices

Predicted Janus SnSSe monolayer: a comprehensive first-principle study

Unraveling the Emerging Photocatalytic, Thermoelectric, and Topological Properties of Intercalated Architecture MZX (M = Ga and In; Z = Si, Ge and Sn; X = S, Se, and Te) Monolayers

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Exploring the Valleytronic, Optical, and Piezoelectric Properties of Janus MoBXY2 (X = N, P; Y = S, Se, Te) Monolayers for Multifunctional Applications

Two-dimensional Cr 2 Cl 3 S 3 Janus Magnetic Semiconductor with large magnetic exchange interaction and high- T C

Two-Dimensional Cr2X3S3 (X = Br, I) Janus Semiconductor with Intrinsic Room-Temperature Magnetism

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

Spintronics: Large‐Spin‐Gap Nodal‐Line Half‐Metal and High‐Temperature Ferromagnetic Semiconductor in Cr2X3 (x=o,s,se) Monolayers (adv. Electron. Mater. 1/2020)

Spin-Current Modulation in Hexagonal Buckled ZnTe and CdTe Monolayers for Self-Powered Flexible-Piezo-Spintronic Devices

Spin–orbit Splitting and Piezoelectric Properties of Janus Ge2XY (X ≠ Y = P, As, Sb and Bi)

Anisotropy in colossal piezoelectricity, giant Rashba effect and ultrahigh carrier mobility in Janus structures of quintuple Bi2X3(X = S, Se) monolayers