Abstract:The reversible electric‐field and stacking effect on valley‐ and spin‐polarized electrons of AFM Janus FeClF bilayer is investigated to probe the interplay of spin, valley and layer degrees of freedom. Spontaneous PMA, concurrent and controllable BMS and AVHE by reversible electric‐field suggest the promising design of ferrovalley BMSs and application of multifunctional valleytronics and spintronics for 2D Janus ferrum dichlorides. Valley polarization from broken inversion symmetry provides a new degree of freedom for carriers, bipolar magnetic semiconductor (BMS) generates a purely spin‐polarized current under a gate voltage, but few systems possess the coexistence of valley polarization and BMS. Based on the recent experimental FeCl2 flakes, reversible electric‐field effect on the valley‐ and spin‐polarized Janus FeClF bilayer with different stackings are investigated herein. Janus FeClF bilayers in all three stacks possess interlayer antiferromagnetic (AFM) and intralayer ferromagnetic (FM) couplings. The most stable A (Cl‐Fe‐F‐Cl‐Fe‐F) stack possesses concurrent and spontaneous BMS nature and valley polarization with perpendicular magnetic anisotropy (PMA), while B (Cl‐Fe‐F‐F‐Fe‐Cl) and C (F‐Fe‐Cl‐Cl‐Fe‐F) stacks exhibit AFM semiconductor characters without valley polarization. Electric‐field achieves a transition of BMS and AFM semiconductor. Large ferrovalley (≈108 meV) exists and is mainly contributed by Fe‐dxy and dx2−y2 orbitals. With the out‐of‐plane to in‐plane to out‐of‐plane transition of the easy axis, anomalous valley Hall effect (AVHE) can be manipulated to presence and disappearance by perpendicular electric‐field, indicating the valley switch effect (VSE). The coexisting BMS feature, PMA, AVHE and VSE make Janus FeClF bilayer a promising candidate for multifunctional valleytronic and spintronic applications, favoring broad explorations for the low‐dimensional Janus family.

Intraband Lifshitz transition and Stoner ferromagnetism in Janus P A 2 As ( A = Si , Ge , Sn , and Pb) monolayers

Prediction of interesting ferromagnetism in Janus semiconducting Cr$_2$AsP monolayer

Prediction of Interesting Ferromagnetism in Janus Semiconducting Cr2AsP Monolayer

Electronic phase transition, perpendicular magnetic anisotropy and high Curie temperature in Janus FeClF

Tuning Rashba effect, band inversion, and spin-charge conversion of Janus X Sn 2 Y monolayers via an external field

High-temperature ferromagnetism and half-metallicity in hole-doped Janus O M 2 S ( M = Ga , In , and Tl ) monolayers

Janus V2AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy

Two-Dimensional Ferromagnetic Half-Metallic Janus V2AsP Monolayer

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

First principles study of 2D half-metallic ferromagnetism in Janus Mn2XSb (X = As, P) monolayers

First principles study of 2D half-metallic ferromagnetism in Janus Mn<sub>2</sub>XSb (X <b>=</b> As, P) monolayers

Ferroelectricity and High Curie Temperature in a 2D Janus Magnet.

Manipulating the Electronic Structure and Physical Properties in Monolayer Mo2I3Br3via Strain and Doping

Electric‐Field‐ and Stacking‐Tuned Antiferromagnetic FeClF Bilayer: The Coexistence of Bipolar Magnetic Semiconductor and Anomalous Valley Hall Effect

Manipulating the electronic structure and physical properties in monolayer Mo2I3Br3 via strain and doping

Two-dimensional Janus SVAN 2 (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field

First-principles Calculations on the Mechanical, Electronic, Magnetic and Optical Properties of Two-Dimensional Janus Cr_2TeX (X= P, As, Sb) Monolayers

Stable Antiferromagnetic Property and Tunable Electronic Structure of Two-Dimensional MnPX3 (X = S and Se) from Pristine Structure to Janus Phase

First principles prediction of two-dimensional Janus STiXY 2 (X = Si, Ge; Y = N, P, As) materials

First-principles calculations on the mechanical, electronic, magnetic and optical properties of two-dimensional Janus Cr$_2$TeX (X= P, As, Sb) monolayers

Adjusting Electronic Properties of Janus SHfAZ2 (A═Si,Ge; Z═N, P, As) via Strain Engineering and an Electric Field