Two-dimensional Janus SVAN 2 (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field

Zhen Gao,Yao He,Kai Xiong

DOI: https://doi.org/10.1039/d3dt03031h

IF: 4

2023-01-01

Dalton Transactions

Abstract:2D Janus SVAZ2 (A = Si, Ge) monolayers with room temperature ferromagnetism and tunable electronic properties.

chemistry, inorganic & nuclear

What problem does this paper attempt to address?

Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

Junlin Luo,Haiyu Meng,Ruoyan Xu,Xiong-Xiong Xue,Yee Sin Ang

DOI: https://doi.org/10.1063/5.0190261

IF: 4

2024-03-11

Applied Physics Letters

Abstract:Two-dimensional (2D) ferromagnetic materials with Curie temperature (Tc) above room temperature have great potential ranging from spintronics to information processing and storage. Here, we computationally design a series of 1T′α-VXY (X = S, Se, Te; Y = Cl, Br, I) monolayers with the X and Y atoms arranged alternately in the 2D plane. VXY monolayers are ferromagnetic semiconductors with Tc much higher than room temperature. Furthermore, the symmetry breaking of VXY bilayers leads to sliding ferroelectricity with large reversible out-of-plane electric polarization and moderate interlayer sliding barriers. We further show that half-metal-to-semiconductor nonvolatile field-effect switching can be achieved in multiferroic van der Waals heterostructures composed of VXY and In2S3 ferroelectric substrates due to the synergistic effect between the polarization field-induced band edge shifting and the selective charge transfer at the interface. These findings reveal a promising role of 2D Janus 1T′α-VXY in spintronics, ferroelectric, and multiferroic device applications.

physics, applied
Two-dimensional Janus monolayers with tunable electronic and magnetic properties

T. Mukherjee,S. Kar,S. J. Ray

DOI: https://doi.org/10.1557/s43578-022-00753-5

IF: 2.7

2022-10-28

Journal of Materials Research

Abstract:In the post graphene era, the discovery of magnetism in two-dimensional (2D) intrinsic nanomagnets has opened up exciting possibilities for low-dimensional spintronics. In this article, we have reported three new 2D Janus nanomagnets VBrCl2, VBrI2, and VClBrI for the first time. First-principles based density functional theory calculations reveal that these monolayers are intrinsically magnetic with indirect band gap semiconducting properties and further the magnetic and electronic properties of these monolayers are enhanced with the application of biaxial strain and electric field. We observe interesting electronic and magnetic phase transitions, tunable band gap, and supreme enhancement of the Curie temperature (~ 686%). Large magnetic anisotropic energy (MAE) with high magnetic moment and tunable band gap property make these Janus materials useful candidates for future information storage, optoelectronics, and 2D spin circuit development.Graphical abstract

materials science, multidisciplinary
Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Zhen Gao,Yao He,Kai Xiong

DOI: https://doi.org/10.1039/d3dt02904b

IF: 4

2023-10-17

Dalton Transactions

Abstract:Recently, significant attention has been directed towards two-dimensional Janus materials owing to their unique structure and novel properties. In this work, we have introduced novel two-dimensional Janus monolayers, SZrAZ 2 (A = Si, Ge; Z = P, As), through first principles. Our primary focus was the investigation of the controllable electronic properties exhibited by the Janus SZrAZ 2 structures under the influence of strain and an external electric field. Our research findings indicate the dynamic and thermodynamic stability of Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers. In the equilibrium state, these monolayers exhibit properties of an indirect band gap semiconductor. When subjected to biaxial strain and an external electric field, we observed that the dependency of SZrSiAs 2 and SZrGeAs 2 monolayers on an external electric field is very weak. Their electronic properties can only be modulated by applying biaxial strain. For SZrSiP 2 and SZrGeP 2 monolayers, their electronic properties can be modulated under biaxial strain and an external electric field, resulting in a transition from semiconducting to metallic behavior. Finally, we calculated the carrier mobility of these four structures and observed that the SZrGeAs 2 monolayer exhibits a hole mobility of up to 597.52 cm 2 s −1 V −1 in the x -direction, whereas the SZrSiP 2 monolayer demonstrates an electron mobility of up to 479.30 cm 2 s −1 V −1 in the y -direction. In the x -direction, the electron mobility of SZrSiAs 2 and SZrGeP 2 monolayers was measured to be 189.88 and 528.44 cm 2 s −1 V −1 , respectively. These values are greater than or equivalent to that of experimentally synthesized MoS 2 (∼200 cm 2 s −1 V −1 ). Our research lays the foundation for utilizing two-dimensional Janus materials in electronic devices.

chemistry, inorganic & nuclear
Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Jun Zhao,Yunxi Qi,Can Yao,Hui Zeng

DOI: https://doi.org/10.1063/5.0188258

IF: 4

2024-02-26

Applied Physics Letters

Abstract:The manipulation of valley-dependent properties in two-dimensional (2D) materials is intriguing for developing valleytronics. Using first-principles calculations, we explore valley-dependent properties of Janus SVGeN2 monolayer and reveal large and tunable valley polarization by tensile strain. The SVGeN2 monolayer possesses excellent stability. Furthermore, strain-driven topological magneto-valley phase transitions are predicted for this monolayer, leading to the valley quantum anomalous Hall (VQAH) phenomenon. The VQAH state, which is featured by the coexistence of complete valley polarization and topological phase, is confirmed by sign reversal of Berry curvature and the nontrivial band topology. The calculated magnetic anisotropy energy indicates that the Janus SVGeN2 monolayer possesses a ferromagnetic ground state and in-plane magnetization. Our investigation provides some physical insights into the strain-driven topological phase transition and manipulation of valley-dependent properties to realize giant valley polarization in the Janus 2D magnet.

physics, applied
Ferroelectricity and High Curie Temperature in a 2D Janus Magnet.

Kaijuan Pang,Xiaodong Xu,Ruiqi Ku,Yadong Wei,Tao Ying,Weiqi Li,Jianqun Yang,Xingji Li,Yongyuan Jiang

DOI: https://doi.org/10.1021/acsami.2c18812

IF: 9.5

2023-01-01

ACS Applied Materials & Interfaces

Abstract:The breaking of the out-of-plane symmetry makes a two-dimensional (2D) Janus monolayer a new platform to explore the coupling between ferroelectricity and ferromagnetism. Using density functional theory in combination with Monte Carlo simulations, we report a novel phase-switchable 2D multiferroic material VInSe3 with large intrinsic out-of-plane spontaneous electric polarization and a high Curie temperature (Tc). The structural transition energy barrier between the two phases is determined to be 0.4 eV, indicating the switchability of the electric polarizations and the potential ferroelectricity. Carrier doping can boost the Curie temperature above room temperature, attributing to the enhanced magnetic exchange interaction. A transition from the ferromagnetic (FM) state to the antiferromagnetic (AFM) state can be induced by carrier doping in octahedra-VInSe3, while FM coupling is well-preserved in tetrahedron-VInSe3, which can be regulated to be either an XY or Ising magnet at an appropriate carrier concentration. These findings not only enrich the family of high-Tc low-dimensional monolayers but also offer a new direction for the design and multifunctional application of multiferroic materials.
High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Yulu Ren,Qiaoqiao Li,Wenhui Wan,Yong Liu,Yanfeng Ge

DOI: https://doi.org/10.1103/PhysRevB.101.134421

2020-01-14

Abstract:Two-dimensional (2D) intrinsic ferromagnetic semiconductors are expected to stand out in the spintronic field. Recently, the monolayer VI$_{3}$ has been experimentally synthesized but the weak ferromagnetism and low Curie temperature ($T_C$) limit its potential application. Here we report that the Janus structure can elevate the $T_C$ to 240 K. And it is discussed that the reason for high $T_C$ in Janus structure originates from the lower virtual exchange gap between $t_{2g}$ and $e_{g}$ states of nearest-neighbor V atoms. Besides, $T_C$ can be further substantially enhanced by tensile strain due to the increasing ferromagnetism driven by rapidly quenched direct exchange interaction. Our work supports a feasible approach to enhance Curie temperature of monolayer VI$_{3}$ and unveils novel stable intrinsic FM semiconductors for realistic applications in spintronics.

Materials Science
Janus V2AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy

Wenhui Wan,Rui Zhao,Yanfeng Ge,Yong Liu

DOI: https://doi.org/10.1088/1361-648X/aca30c

2022-12-14

Abstract:The search and design of two-dimensional (2D) magnetic semiconductors for spintronics applications are particularly significant. In this work, we investigated the electronic and magnetic properties of Janus structure based on Dirac half-metallic vanadium phosphide (VP) monolayer (ML) by first-principles calculations. Due to the vertical symmetry breaking, Janus V2AsP ML becomes an intrinsic ferromagnetic semiconductor with a narrow band gap of 0.21 eV. We analyzed the electronic structure and origin of the in-plane easy axis in Janus V2AsP. The electron effective mass is anisotropic and only 0.129 m0along thex-direction. The Curie temperatureTcand magnetic anisotropy energy (MAE) of Janus V2AsP reach 490 K and 178 µeV per V atom, respectively. A uniaxial tensile stainɛxof 5% can increase its band gap and MAE to 0.39 eV and 210.6 µeV per V atom while maintaining itsTcbeing above room temperature. Moreover, the direction of the easy axis can be changed between the in-planex- andy-direction by a small uniaxial tensile strainɛxof 2%. Our study can motivate further research on the design the magnetic semiconductors in Janus structures based on 2D Dirac half-metals for spintronics applications.
Two-dimensional ferromagnetic semiconductor VBr<sub>3</sub> with tunable anisotropy

Lu Liu,Ke Yang,Guangyu Wang,Hua Wu

DOI: https://doi.org/10.1039/d0tc03962d

IF: 6.4

2020-01-01

Journal of Materials Chemistry C

Abstract:Two-dimensional (2D) ferromagnets (FMs) have attracted widespread attention due to their prospects in spintronic applications. Here we explore the electronic structure and magnetic properties of the bulk and monolayer of VBr3 in the honeycomb lattice, using first-principles calculations, crystal field level analyses, and Monte Carlo simulations. Our results show that VBr3 bulk has the (S = 1) ground state and possesses a small orbital moment and weak in-plane magnetic anisotropy. These results explain well the recent experiments. More interestingly, we find that a tensile strain on the semiconducting VBr3 monolayer tunes the ground state into and thus produces a large orbital moment and a strong out-of-plane anisotropy. Then, the significantly enhanced FM superexchange and single ion anisotropy (SIA) would raise T-C from 20 K for the bare VBr3 monolayer to 100-115 K under a 2.5-5% strain. Therefore, VBr3 would be a promising 2D FM semiconductor with a tunable anisotropy.
Two-Dimensional Ferromagnetic Half-Metallic Janus V2AsP Monolayer

Qiuyue Ma,Guochun Yang,Yong Liu

DOI: https://doi.org/10.48550/arXiv.2204.01274

2022-04-16

Abstract:Two-dimensional (2D) ferromagnetic materials present promising candidates for spintronic devices, and the half-metallic materials with 100% spin polarization at Fermi energy level are highly desired for many spin-based devices. 2D Janus materials have attracted great attention in recent years due to their excellent properties induced by breaking the symmetry. Here, using the density functional theory, we report that the Janus V2AsP monolayer demonstrates a charming ferromagnetic half-metallic feature. It is dynamically stable in view of the absence of imaginary frequency phonon. The half-metallic gap is about 0.38 eV and the spin splitting of about 1.34eV for the V2AsP monolayer. Interestingly, a tensile strain of 4.9% can induce it to undergo a phase transition from ferromagnetic to anti-ferromagnetic state. Moreover, the Curie temperature (Tc) enhances with the increase of compressive strain. All there appealing properties make the half-metallic Janus V2AsP monolayer a promising material for 2D spintronic applications.

Materials Science
Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Wei Xu,Shiming Yan,Yong Wang,Tiejun Zhou,Wei Zhong,Shaolong Tang

DOI: https://doi.org/10.1021/acsami.3c16448

IF: 9.5

2024-01-01

ACS Applied Materials & Interfaces

Abstract:Exploring room-temperature intrinsic magnetism in two-dimensional (2D) materials for nanoscale spintronic devices has garnered significant interest. Achieving a high Curie temperature and substantial spin polarization in 2D ferromagnetic materials remains challenging. Drawing inspiration from the substantial enhancement of the Curie temperature observed in ferromagnetic CrIS monolayers by manipulating the covalent nature of Cr-S bonds, our study systematically delves into the electronic structure and magnetic properties of Janus M2X3Y3 (M = V, Cr, Mn, Fe, and Co; X = Cl, Br, I; Y = S, Se, and Te) monolayers through first-principles calculations. Our findings reveal that 15 kinds of these monolayers exhibit dynamic and thermodynamic stability while displaying diverse electronic and ferromagnetic characteristics. Notably, Mn2I3S3 demonstrates half-metallicity and in-plane magnetic anisotropy, while Cr2I3Se3 exhibits a half-semiconductor and perpendicular magnetic anisotropy. Consequently, Mn2I3S3 transforms from in-plane to perpendicular magnetic anisotropy through strain manipulation. Cr2I3Se3, under strain, transforms from a half-semiconductor to a bipolar magnetic semiconductor. The strong coupling caused by the M-Y bonds makes them have a Curie temperature higher than room temperature. The unique magnetic properties exhibited by the 2D Janus Mn2I3S3 and Cr2I3Se3 magnets hold promise for applications in spintronics. Our study provides a foundational understanding for future experimental explorations in this exciting research area.
Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers

Runhu Xiao,Zhihao Guan,Dushuo Feng,Changsheng Song

DOI: https://doi.org/10.1063/5.0185859

IF: 2.877

2024-01-22

Journal of Applied Physics

Abstract:By using first-principles calculations and micromagnetic simulations, we investigate the electronic structure, magnetic properties, and skyrmions in two-dimensional Janus Cr2XYTe6 (X,Y = Si, Ge, Sn, X ≠ Y) monolayers. Our findings reveal that the Cr2XYTe6 monolayers are ferromagnetic semiconductors with a high Curie temperature (Tc). The bandgap and Tc can be further increased by applying tensile strain. In addition, there is a transition from the ferromagnetic to the antiferromagnetic state at a compressive strain. Both Cr2SiSnTe6 and Cr2SiGeTe6 exhibit a large magnetic anisotropy energy, which are mainly associated with the significant spin–orbit coupling of the nonmagnetic Te atoms rather than that of the magnetic Cr atoms. Interestingly, the Cr2SiSnTe6 monolayer exhibits a significant Dzyaloshinskii–Moriya interaction of 1.12 meV, which facilitates the formation of chiral domain walls and skyrmions. Furthermore, under tensile strain, chiral DWs can be transformed into skyrmions if applying an external magnetic field. These findings suggest that Janus Cr2XYTe6 monolayers hold promise for spintronic nanodevice applications.

physics, applied
Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Qiuyue Ma,Yanfeng Ge,Wenhui Wan,Guochun Yang,Yong Liu

DOI: https://doi.org/10.1002/pssb.202400340

2024-01-01

Abstract:Two‐dimensional (2D) Janus materials are a fascinating class of materials resulting from their unique electronic and magnetic properties induced by mirror symmetry breaking. However, 2D Janus materials with intrinsic magnetism remain rather rare, casting a mysterious veil over magnetism. In this work, the electronic and magnetic properties of Janus Mn2GeX (X = As, Sb) monolayers using the first‐principles calculations are investigated. The results demonstrate that these Janus materials exhibit excellent mechanical and dynamic stability, indicating their potential for future applications in nanoscale spintronic devices. Interestingly, the Janus and monolayers possess exciting half‐metallic character with wide half‐metallic gaps of 0.29 and 0.18 eV, and spin gaps of 1.68 and 1.62 eV, respectively. Their calculated ground state exhibits a strong preference for ferromagnetic ordering, with a Curie temperature () of 630 and 590 K, respectively. Additionally, the ferromagnetism of Janus Mn2GeX (X = As, Sb) monolayers is robust against biaxial strain ranging from −6% to 6%. Under 6% tensile strain, the calculated of the monolayer is 639 K, which represents a 9% increase compared to the observed in the unstrained condition. All these intriguing electronic and magnetic properties make the Janus Mn2GeX (X = As, Sb) monolayers an appealing candidate for applications in nanoscale spintronic devices.
Tunable Magnetism and Valleys in VSiZ_3 Monolayers

Xiaoyu Wang,Li Liang,Huiqian Wang,Xiao Li

2023-01-01

Abstract:Two-dimensional magnetism and valleys have recently emerged as two significant research areas, with intriguing properties and practical uses in advanced information technology. Considering the importance of these two areas and their couplings, controllable creations of both the magnetism and valley polarization are highly sought after. Based on first-principles calculations, we propose a new class of two-dimensional monolayers with a chemical formula of MAZ_3, which is viewed as a 2H-MZ_2 trilayer passivated by the A-Z bilayer on its one side. Taking VSiN_3 as an example, the MAZ_3 monolayers are found to exhibit tunable magnetism and valleys. For the intrinsic VSiN_3 monolayer, it is a non-magnetic semiconductor, with multiple degenerate valleys and trigonal warping near K_± points in the band structure. Besides, the bands have spin splittings owing to the spin-orbit coupling. Under a moderate carrier doping, the monolayer becomes a Stoner ferromagnet, which enhances the spin splittings of the valence band and generates valley splittings. Moreover, the Berry curvature is valley contrasting, leading to distinct valley-spin related anomalous Hall currents as the doping concentration increases. Our work opens up new way to modulate the spin splittings and valley splittings via electric means, and provides opportunities for exploring advanced spintronic and valleytronic devices.
Tunable Magnetism and Valleys in VSiZ$_3$ monolayers

Xiaoyu Wang,Li Liang,Huiqian Wang,Xiao Li

2023-09-05

Abstract:Two-dimensional magnetism and valleys have recently emerged as two significant research areas, with intriguing properties and practical uses in advanced information technology. Considering the importance of these two areas and their couplings, controllable creations of both the magnetism and valley polarization are highly sought after. Based on first-principles calculations, we propose a new class of two-dimensional monolayers with a chemical formula of MAZ$_3$, which is viewed as a 2H-MZ$_2$ trilayer passivated by the A-Z bilayer on its one side. Taking VSiN$_3$ as an example, the MAZ$_3$ monolayers are found to exhibit tunable magnetism and valleys. For the intrinsic VSiN$_3$ monolayer, it is a non-magnetic semiconductor, with multiple degenerate valleys and trigonal warping near $K_\pm$ points in the band structure. Besides, the bands have spin splittings owing to the spin-orbit coupling. Under a moderate carrier doping, the monolayer becomes a Stoner ferromagnet, which enhances the spin splittings of the valence band and generates valley splittings. Moreover, the Berry curvature is valley contrasting, leading to distinct valley-spin related anomalous Hall currents as the doping concentration increases. Our work opens up new way to modulate the spin splittings and valley splittings via electric means, and provides opportunities for exploring advanced spintronic and valleytronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer

Dong Li,Pengyu Liu,Ruiman He,Yihang Bai,Chang Liu,Bing Wang,Guanwei Jia

DOI: https://doi.org/10.1063/5.0155960

IF: 4

2023-07-31

Applied Physics Letters

Abstract:Two dimensional (2D) multiferroic materials have great potential for miniaturized electronic and high-density multi-states data storage devices due to the coexistence of electric and spin polarization. Because the origins of magnetism and ferroelectricity are mutually exclusive and difficult to coexist, there are still rare to date 2D multiferroic semiconductors with good performance. Here, we propose a 2D multiferroic material, VSI2 monolayer, which has both ferromagnetic and ferroelectric properties by first principles calculation. It shows robust ferroelectricity with an appropriate switching barrier (∼140 meV), and the in-plane ferroelectric polarization is 1.44 × 10−10 C/m. At the same time, the VSI2 monolayer magnetic easy axis is along the b-axis direction and owns a large magnetic anisotropy energy (MAE) (512 μeV/V-ion). Based on Monte Carlo simulations of the Heisenberg model, the Curie temperature (TC) is calculated to be approximately 92 K. In addition, biaxial strain can significantly change the MAE, and the in-plane magnetic easy axis can be switched to the out-of-plane direction by 5% biaxial tensile strain. In particular, we can change the magnetic moment at the two ends of VSI2 nanoribbons by switching the direction of electric polarization, providing an opportunity for the application of magnetic-electric control and memory devices. Our theoretical prediction provides a good platform for studying the 2D multiferroic effects and spintronic properties.

physics, applied
A new 2D Janus family with multiple properties: auxetic behavior, straintunable photocatalyst, high Curie temperature ferromagnets, and piezoelectric quantum anomalous Hall insulator

Yu Liu,ShuaiYu Wang,Fengyu Li

DOI: https://doi.org/10.1007/s40843-023-2708-4

2024-03-08

Science China Materials

Abstract:Discovering new two-dimensional (2D) materials, exploring their unique properties and potentials in various applications are of paramount importance to condensed matter physics and materials science. Here based on the diverse properties of the novel square lattice S -XS 2 materials found in experiments and computations, we identified 7 novel 2D Janus S -XSSe (X = Si, Sn, V, Cr, Mo, Re, Os) monolayers by means of density functional theory computations. Remarkably, both S -SiSSe and S -SnSSe monolayers possess the auxetic behavior. In addition, they can act as potential photocatalysts, and their photocatalytic performance can be enhanced by changing the pH and applying biaxial strains. Without spin-orbit coupling (SOC), the S -VSSe, S -CrSSe, and S -MoSSe are ferromagnetic half-metals, and have high Curie temperatures T C (210, 810, and 390 K, respectively). When SOC is included, the S -VSSe becomes a quantum anomalous Hall insulator with a sizable gap (45.4 meV) and one chiral edge state (Chern number C = −1). By symmetry analysis of semiconducting S -XSSe (X = Si, Sn, V) monolayers, only out-of-plane piezoelectric response can be induced by a uniaxial strain in the basal plane, and among them, S -VSSe has both the largest out-of-plane piezoelectric coefficients d 31 and d 32 , with values of −0.013 and 0.025 pm V −1 , respectively. The concurrence of ferromagnetism, topology, and piezoelectricity empowers the S -VSSe monolayer as a potential platform for multi-functional spintronics applications with a large gap and high T C . This theoretical work brings new members, also manifoldness in the properties and functions to the renown 2D materials family.

materials science, multidisciplinary
Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

Shaowen Xu,Fanhao Jia,Guodong Zhao,Wei Wu,Wei Ren

DOI: https://doi.org/10.1039/D1TC02238E

2021-05-31

Abstract:Two-dimensional (2D) multiferroics have been casted great attention owing to their promising prospects for miniaturized electronic and memory <a class="link-external link-http" href="http://devices.Here" rel="external noopener nofollow">this http URL</a>, we proposed a highly stable 2D multiferroic, VOF monolayer, which is an intrinsic ferromagnetic half semiconductor with large spin polarization ~2 $\mu_{B}/V$ atom and a significant uniaxial magnetic anisotropy along a-axis (410 $\mu eV/V$ atom). Meanwhile, it shows excellent ferroelectricity with a large spontaneous polarization 32.7 $\mu C/cm^{2}$ and a moderate energy barrier (~43 meV/atom) between two ferroelectric states, which can be ascribed to the Jahn-Teller <a class="link-external link-http" href="http://distortion.Moreover" rel="external noopener nofollow">this http URL</a>, VOF monolayer harbors an ultra-large negative Poisson's ratio in the in-plane direction (~-0.34). The Curie temperature evaluated from the Monte Carlo simulations based on the Ising model is about 215 K, which can be enhanced room temperature under -4% compressive biaxial <a class="link-external link-http" href="http://strain.The" rel="external noopener nofollow">this http URL</a> combination of ferromagnetism and ferroelectricity in the VOF monolayer could provide a promising platform for future study of multiferroic effects and next-generation multifunctional nanoelectronic device applications.

Materials Science
Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers.

Kaijuan Pang,Xiaodong Xu,Yadong Wei,Tao Ying,Bo Gao,Weiqi Li,Yongyuan Jiang

DOI: https://doi.org/10.1039/d3nr02188b

IF: 6.7

2023-01-01

Nanoscale

Abstract:The lack of macroscopic magnetic moments makes antiferromagnetic materials promising candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides (VXYSe; X, Y = Al, Ga) monolayers are investigated based on the density-functional theory and Monte Carlo simulations. The results reveal that the Néel temperature of the VGaSe monolayer is 18 K with zigzag2-antiferromagnetic (AFM) spin ordering. Also, the magnetic ordering of V ions in VAlSe and VAlGaSe monolayers prefer zigzag1-AFM coupling with Néel temperature of 47 K and 33 K, respectively. The magnetic anisotropy calculations demonstrate that the easy magnetization axis of the VXYSe monolayers is parallel to the axis. In addition, the VXYSe monolayers can be adjusted from the AFM state to the ferromagnetic (FM) state under biaxial stretching, which can be attributed to the competition between d-p-d superexchange and d-d direct exchange caused by the variation of bond length. The transition temperature of VXYSe monolayers can be elevated above room temperature with the help of compression strain. In particular, the in-plane magnetic anisotropy is a robust characteristic regardless of the magnitude of the applied biaxial strain. These explorations not only enrich the family of AFM monolayers with excellent stability but also provide distinctive ideas for the performance control of AFM materials and their applications in nanodevices.
Emergent Multifunctionality in Two-Dimensional Janus VSBrI Monolayer: A Study of Multiferroicity, Magnetoelectricity, and Piezoelectricity

Qiuyue Ma,Busheng Wang,Guochun Yang,Yong Liu

2024-09-26

Abstract:The Janus VSBrI monolayer, identified by first-principles calculations, emerges as a promising semiconducting material with desirable ferromagnetic and ferroelectric properties. It's in-plane magnetic anisotropic energy is up to 460 $\mu$eV/V , and in-plane and out-of-plane piezoelectric strain coefficients are larger than many other known two-dimensional materials. The energy variations among different magnetic states show a strong correlate with polarization. Interestingly, the stability of the ferroelectric phase can be further enhanced by the application of biaxial tensile strain. These intriguing properties make the Janus VSBrI monolayer highly desirable for practical applications in piezoelectronic devices, and a promising candidate for multifunctional spintronic devices.

Materials Science,Mesoscale and Nanoscale Physics
Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2

Wenjuan Ci,Huali Yang,Wuhong Xue,Ruilong Yang,Baohua Lv,Peng Wang,Run-Wei Li,Xiao-Hong Xu

DOI: https://doi.org/10.1007/s12274-022-4400-9

IF: 9.9

2022-05-12

Nano Research

Abstract:Two-dimensional (2D) van der Waals (vdW) magnetic materials with reduced dimensionality often exhibit unexpected properties compared to their bulk counterparts. In particular, the mechanical flexibility of 2D structure, enhanced ferromagnetism at reduced layer thickness, as well as robust perpendicular magnetic anisotropy are quite appealing for constructing novel spintronic devices. The vdW vanadium diselenide (VSe 2 ) is an attractive material whose bulk is paramagnetic while monolayer is ferromagnetic with a Curie temperature ( T c ) above room temperature. To explore its possible device applications, a detailed investigation on the thickness-dependent magnetism and strain modulation behavior of VSe 2 is highly demanded. In this article, the VSe 2 nanoflakes were controllably prepared via chemical vapor deposition (CVD) method. The few-layer single VSe 2 nanoflakes were found to exhibit magnetic domain structures at room temperature. Ambient magnetic force microscopy (MFM) phase images reveal a clear thickness-dependent magnetism and the MFM phase contrast is traceable for the nanoflakes of layer thickness below ∼ 6 nm. Moreover, applying strain is found efficient in modulating the magnetic moment and coercive field of 2D VSe 2 at room temperature. These results are helpful for understanding the ferromagnetism of high temperature 2D magnets and for constructing novel straintronic devices or flexible spintronic devices.

materials science, multidisciplinary,chemistry, physical,physics, applied,nanoscience & nanotechnology

Two-dimensional Janus SVAN 2 (A = Si, Ge) monolayers with intrinsic semiconductor character and room temperature ferromagnetism: tunable electronic properties via strain and an electric field

Two-dimensional 1T′ α -VXY (X = S, Se, Te; Y = Cl, Br, I): A multifunctional vanadium chalcohalide family with room-temperature ferromagnetism and sliding ferroelectricity

Two-dimensional Janus monolayers with tunable electronic and magnetic properties

Strain and electric field induced electronic property modifications in two-dimensional Janus SZrAZ 2 (A = Si, Ge; Z = P, As) monolayers

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

Ferroelectricity and High Curie Temperature in a 2D Janus Magnet.

High-Temperature Ferromagnetic Semiconductors: Janus Monolayer Vanadium Trihalides

Janus V2AsP monolayer : a ferromagnetic semiconductor with a narrow band gap, a high Curie temperature and controllable magnetic anisotropy

Two-dimensional ferromagnetic semiconductor VBr<sub>3</sub> with tunable anisotropy

Two-Dimensional Ferromagnetic Half-Metallic Janus V2AsP Monolayer

Two-Dimensional Room-Temperature Magnetism in Janus Mn2I3S3 and Cr2I3Se3 Monolayers with Tunable Magnetic Properties by Strain Engineering.

Strain-tunable ferromagnetism and skyrmions in two-dimensional Janus Cr2XYTe6 (X, Y = Si, Ge, Sn, and X≠Y) monolayers

Half‐Metallic Ferromagnetism in 2D Janus Monolayers: Mn2GeX (X = As, Sb)

Tunable Magnetism and Valleys in VSiZ_3 Monolayers

Tunable Magnetism and Valleys in VSiZ$_3$ monolayers

Intrinsic multiferroicity and magnetoelectric coupling in VSI2 monolayer

A new 2D Janus family with multiple properties: auxetic behavior, straintunable photocatalyst, high Curie temperature ferromagnets, and piezoelectric quantum anomalous Hall insulator

Two-dimensional Ferroelectric Ferromagnetic Half Semiconductor in VOF monolayer

Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers.

Emergent Multifunctionality in Two-Dimensional Janus VSBrI Monolayer: A Study of Multiferroicity, Magnetoelectricity, and Piezoelectricity

Thickness-dependent and strain-tunable magnetism in two-dimensional van der Waals VSe2