Abstract:Electronic correlations could have significant impact on the material properties. They are typically pronounced for localized orbitals and enhanced in low-dimensional systems, so two-dimensional (2D) transition metal compounds could be a good platform to study their effects. Recently, a new class of 2D transition metal compounds, the MoSi2N4-family materials, has been discovered, and some of them exhibit intrinsic magnetism. Here, taking monolayer VSi2P4 as an example from the family, we investigate the impact of correlation effects on its physical properties, based on the first-principles calculations with the DFT+U approach. We find that different correlation strengths can drive the system into a variety of interesting ground states, with rich magnetic, topological, and valley features. With increasing correlation strength, while the system favors a ferromagnetic semiconductor state for most cases, the magnetic anisotropy and the band gap type undergo multiple transitions, and in the process, the band edges can form single, two, or three valleys for electrons or holes. Remarkably, there is a quantum anomalous Hall (QAH) insulator phase, which has a unit Chern number and has its chiral edge states polarized in one of the valleys. The boundary of the QAH phase corresponds to the half-valley semimetal state with fully valley polarized bulk carriers. We further show that for phases with the out-of-plane magnetic anisotropy, the interplay between spin-orbit coupling and orbital character of valleys enables an intrinsic valley polarization for electrons but not for holes. This electron valley polarization can be switched by reversing the magnetization direction, providing a new route of magnetic control of valleytronics. Our result sheds light on the possible role of correlation effects in the 2D transition metal compounds, and it will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

Tunable Magnetism and Valleys in VSiZ$_3$ monolayers

Spin-valley Coupling in a Two-Dimensional VSi2N4 Monolayer

Tunable polarization properties of charge, spin, and valley in Janus VSiGeZ4 (Z= N, P, As) monolayers

Multiple Valley Modulations in Noncollinear Antiferromagnets

Magnetically and electrically controllable valley splittings in MXene monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Carrier-tunable magnetism and valleys in monolayers

Built-in electric field and strain tunable valley-related multiple topological phase transitions in monolayers

Correlation-driven topological and valley states in monolayer VSi 2 P 4

Valley manipulation by slidingly tuning the magnetic proximity effect in Heterostructures

Electrically switchable valley polarization, spin/valley filter, and valve effects in transition-metal dichalcogenide monolayers interfaced with two-dimensional ferromagnetic semiconductors

Magnetically and electrically controllable valley splittings in MXene Co2CF2 monolayers

Strain-induced valley polarization, topological states, and piezomagnetism in two-dimensional altermagnetic V$_2$Te$_2$O, V$_2$STeO, V$_2$SSeO, and V$_2$S$_2$O

Tunable abundant valley Hall effect and chiral spin-valley locking in Janus monolayer VCGeN4

Valley-related multiple Hall effect in monolayer V Si 2 P 4

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure

Valley Contrasting Magnetoluminescence in Monolayer MoS$_{2}$ Quantum Hall Systems

Valley-related multiple Hall effect in single-layer VSi2P4

Strain-driven valley-dependent Berry phase effects and topological transitions in Janus SVGeN2 monolayer

MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect

Large Valley Polarization In Monolayer Mote2 On A Magnetic Substrate