Abstract:Nonvolatile static random access memory (nvSRAM) has been widely investigated as a promising on-chip memory architecture in energy harvesting sensor nodes, due to zero standby power, resilience to power failures, and fast read/write operations. However, conventional approaches back up all data from static random access memory into nonvolatile memory when power failures happen. It leads to significant energy overhead and peak inrush current, which has a negative impact on the system performance and circuit reliability. This paper proposes a holistic data backup optimization to mitigate these problems in nvSRAM, consisting of a partial backup algorithm and a run-time adaptive write policy. A statistic dead-block predictor is employed to achieve dead block identification with trivial hardware overhead. An adaptive policy is used to switch between write-back and write-through strategy to reduce the rollback induced by backup failures. Experimental results show that the proposed scheme improves the performance by 4.6% on average while the backup power consumption and the inrush current are reduced by 38.1% and 54% on average compared to the full backup scheme. What is more, the backup capacitor size for energy buffer can be reduced by 40% on average under the same performance constraint.

A 130nm FeRAM-based Parallel Recovery Nonvolatile SOC for Normally-off Operations with 3.9× Faster Running Speed and 11× Higher Energy Efficiency Using Fast Power-on Detection and Nonvolatile Radio Controller

A 130-Nm Ferroelectric Nonvolatile System-on-Chip with Direct Peripheral Restore Architecture for Transient Computing System

A 65-Nm ReRAM-Enabled Nonvolatile Processor with Time-Space Domain Adaption and Self-Write-Termination Achieving $> 4\times $ Faster Clock Frequency and $> 6\times $ Higher Restore Speed

4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic

A High-Performance Wordline Voltage-Generating System for Low-Power Low-Voltage Flash Memory

Ultrafast Self-Rectifying Memristors for Advanced In-Memory Computing

A 3us wake-up time nonvolatile processor based on ferroelectric flip-flops

An 8t/cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore Energy

A ReRAM-based Single-Nvm Nonvolatile Flip-Flop with Reduced Stress-Time and Write-Power Against Wide Distribution in Write-Time by Using Self-Write-termination Scheme for Nonvolatile Processors in IoT Era

A Ferroelectric Nonvolatile Processor with 46 $\mu $ S System-Level Wake-up Time and 14 $\mu $ S Sleep Time for Energy Harvesting Applications

Design of Nonvolatile SRAM with Ferroelectric FETs for Energy-Efficient Backup and Restore

A 462gops/j RRAM-based Nonvolatile Intelligent Processor for Energy Harvesting IoE System Featuring Nonvolatile Logics and Processing-in-memory

A Compression-Based Area-Efficient Recovery Architecture for Nonvolatile Processors

An energy efficient backup scheme with low inrush current for nonvolatile SRAM in energy harvesting sensor nodes

A nonvolatile SRAM integrated with ferroelectric HfO2 capacitor for normally-off and ultralow power IoT application

A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.

Data Backup Optimization for Nonvolatile SRAM in Energy Harvesting Sensor Nodes

Novel RRAM Programming Technology for Instant-on and High-Security FPGAs

HW/SW Co-Design of Nonvolatile IO System in Energy Harvesting Sensor Nodes for Optimal Data Acquisition

Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design

A 9mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier