Abstract:Transition metal dichalcogenide (TMDC) monolayer has recently emerged as an important two-dimensional semiconductor with promising potentials for electronic and optoelectronic devices. Unlike semi-metallic graphene, layered TMDC has a sizable band gap. More interestingly, when thinned down to a monolayer, TMDC transforms from an indirect bandgap to a direct bandgap semiconductor, exhibiting a number of intriguing optical phenomena such as valley selective circular dichroism, doping dependent charged excitons, and strong photocurrent responses. However, the fundamental mechanism underlying such a strong light-matter interaction is still under intensive investigation. The observed optical resonance was initially considered to be band-to-band transitions. In contrast, first-principle calculations predicted a much larger quasiparticle band gap size and an optical response that is dominated by excitonic effects. Here, we report experimental evidence of the exciton dominance mechanism by discovering a series of excitonic dark states in single-layer WS2 using two-photon excitation spectroscopy. In combination with GW-BSE theory, we find the excitons are Wannier excitons in nature but possess extraordinarily large binding energy (~0.7 eV), leading to a quasiparticle band gap of 2.7 eV. These strongly bound exciton states are observed stable even at room temperature. We reveal an exciton series in significant deviation from hydrogen models, with a novel inverse energy dependence on the orbital angular momentum. These excitonic energy levels are experimentally found robust against environmental perturbations. The discovery of excitonic dark states and exceptionally large binding energy not only sheds light on the importance of many-electron effects in this two-dimensional gapped system, but also holds exciting potentials for the device application of TMDC monolayers and their heterostructures.

Alloying Effect on Bright–dark Exciton States in Ternary Monolayer MoxW1–xSe2

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

CVD synthesis of Mo(1−x)WxS2 and MoS2(1−x)Se2x alloy monolayers aimed at tuning the bandgap of molybdenum disulfide

Temperature-dependent photoluminescence emission and Raman scattering from Mo1-x W x S2 monolayers.

Emission Enhancement and Exciton Species Modulation in Monolayer WS2 Via Decoration of CdTe Quantum Dots

Observation of Strong Valley Magnetic Response in Monolayer Transition Metal Dichalcogenide Alloys of Mo0.5W0.5Se2 and Mo0.5W0.5Se2/WS2 Heterostructures

Probing Excitonic Dark States in Single-layer Tungsten Disulfide

Controlled synthesis of MoxW1-xTe2 atomic layers with emergent quantum states

Tuning Interlayer Exciton Emission with TMD Alloys in van der Waals Heterobilayers of Mo0.5W0.5Se2 and Its Binary Counterparts

Atomic and electronic structure of two-dimensional Mo(1-x)WxS2 alloys

Unraveling Structural and Optical Properties of Two-Dimensional MoxW1–xS2 Alloys

Sulfur Vacancy Related Optical Transitions in Graded Alloys of MoxW1‐xS2 Monolayers

Broadband tunable resonance modes from multi-composition monolayer MoS2(1− x )Se2 x with SiO2 microsphere cavity

Controllable phase modulation and electronic structures of monolayer MoSe2xTe2(1−x) alloys grown via molecular beam epitaxy

Band engineering in epitaxial monolayer transition metal dichalcogenides alloy Mo<i><sub>x</sub></i>W<sub>1-<i>x</i></sub>Se<sub>2</sub> thin films

Thermal Redistribution of Exciton Population in Monolayer Transition Metal Dichalcogenides Probed with Plasmon–Exciton Coupling Spectroscopy

Observation of excitonic fine structure in a 2D transition-metal dichalcogenide semiconductor.