Abstract:Transition metal dichalcogenide (TMDC) monolayers are newly discovered semiconductors for a wide range of applications in electronics and optoelectronics. Most studies have focused on binary monolayers that share common properties: direct optical bandgap, spin-orbit (SO) splittings of hundreds of meV, light-matter interaction dominated by robust excitons and coupled spin-valley states of electrons. Studies on alloy-based monolayers are more recent, yet they may not only extend the possibilities for TMDC applications through specific engineering but also help understanding the differences between each binary material. Here, we synthesized highly crystalline Mo$_{(1-x)}$W$_{x}$Se$_2$ to show engineering of the direct optical bandgap and the SO coupling in ternary alloy monolayers. We investigate the impact of the tuning of the SO spin splitting on the optical and polarization properties. We show a non-linear increase of the optically generated valley polarization as a function of tungsten concentration, where 40% tungsten incorporation is sufficient to achieve valley polarization as high as in binary WSe2. We also probe the impact of the tuning of the conduction band SO spin splitting on the bright versus dark state population i.e. PL emission intensity. We show that the MoSe2 PL intensity decreases as a function of temperature by an order of magnitude, whereas for WSe2 we measure surprisingly an order of magnitude increase over the same temperature range (T=4-300K). The ternary material shows a trend between these two extreme behaviors. These results show the strong potential of SO engineering in ternary TMDC alloys for optoelectronics and applications based on electron spin- and valley-control.

Broadband tunable resonance modes from multi-composition monolayer MoS2(1− x )Se2 x with SiO2 microsphere cavity

Growth of large-area 2D MoS₂(₁-x) Se₂x semiconductor alloys.

Two-Dimensional Molybdenum Tungsten Diselenide Alloys: Photoluminescence, Raman Scattering, and Electrical Transport

Semiconductors: Growth of Large‐Area 2D MoS2(1‐x)Se2x Semiconductor Alloys (adv. Mater. 17/2014)

Lateral and Vertical MoSe2-MoS2 Heterostructures via Epitaxial Growth: Triggered by High-Temperature Annealing and Precursor Concentration.

Fabrication and Optical Performance of Mo1-xWxS2 Monolayer with Different Composition Ranges Via One-Step Chemical Vapor Deposition Approach

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method.

Spin-orbit engineering in transition metal dichalcogenide alloy monolayers

Controllable Growth of Wafer-Scale Monolayer Transition Metal Dichalcogenides Ternary Alloys with Tunable Band Gap.

CVD Synthesis of Mo((1-x))W(x)S2 and MoS(2(1-x))Se(2x) Alloy Monolayers Aimed at Tuning the Bandgap of Molybdenum Disulfide.

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

Optically Pumped Monolayer MoSe2 Excitonic Lasers from Whispering Gallery Mode Microcavities.

Transition metal dichalcogenide metaphotonic and self-coupled polaritonic platform grown by chemical vapor deposition

Broadband light absorption and photoresponse enhancement in monolayer WSe2 crystal coupled to Sb2O3 microresonators

Synthesis of component-controllable monolayer MoxW(1- x)S2 ySe2(1- y) alloys with continuously tunable band gap and carrier type

Tunable Resonance Coupling in Single Si Nanoparticle-Monolayer WS2 Structures

Tuning Band Gaps in Twisted Bilayer MoS_2

Growth of MoS(2(1-x))Se(2x) (x = 0.41-1.00) Monolayer Alloys with Controlled Morphology by Physical Vapor Deposition.

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Synthesis of 2D MoS2(1- x)Se2 x semiconductor alloy by chemical vapor deposition

2D layered MSe 2 (M = Hf, Ti and Zr) for compact lasers: nonlinear optical properties and GHz lasing