Abstract:Chemical mechanical polishing (CMP) processes have been widely used in many fields with the ability to obtain an ultra-smooth surface. However, a comprehensive understanding of the material removal mechanisms at single pad asperity scale is still lacking, where a large number of abrasive particles are entrapped in the pad asperity/wafer microcontact area and then participate into polishing. In this study, two different pad asperity-scale material removal models are derived based on the indentation-sliding mechanism and chemical bond removal mechanism, respectively. Furthermore, series of pad asperity scale polishing tests are conducted on monocrystalline silicon wafer surface by using a polyoxymethylene (Pom) ball to mimic a single pad asperity. The results show that under the asperity-scale, material removal is highly related to the chemical reaction time between sequential asperity-wafer interactions, indicating the chemical control of the removal rate by controlling the reacted layer thickness. In particular, it is found that the reacted layer thickness follows the diffusion equation, and atoms within not only the topmost surface layer, but also the next or deeper layer can participate in the chemical reaction. Material removal behavior can be well explained by the dynamic formation and breakage of the interfacial chemical bonds between the Si atoms and SiO2 particles, rather than the indentation-sliding mechanism. It is further confirmed that no damage, such as lattice distortion or dislocation, is found in the subsurface of a wafer by the high-resolution transmission electron microscopy (HRTEM). This study provides new insights into the material removal mechanisms in CMP at an asperity-scale.

Chemical–mechanical Wear of Monocrystalline Silicon by a Single Pad Asperity

Planarization process of single crystalline silicon asperity under abrasive rolling effect studied by molecular dynamics simulation

A Model for Mechanical Wear and Abrasive Particle Adhesion during the Chemical Mechanical Polishing Process

Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

Monoatomic Layer Removal Mechanism in Chemical Mechanical Polishing Process: A Molecular Dynamics Study

Modeling the microscale contact status in chemical mechanical polishing process

Effects of grinding-induced surface topography on the material removal mechanism of silicon chemical mechanical polishing

Mechanical Model of Single Abrasive During Chemical Mechanical Polishing: Molecular Dynamics Simulation

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

Wear phenomena in chemical mechanical polishing

Micro-scale contact behavior and its effect on the material removal process during chemical mechanical polishing

Analyzing the effects of pad asperity on chemical mechanical polishing of copper thin film wafer

A chemical mechanical polishing model incorporating both the chemical and mechanical effects

Nano Particles’ Behavior in Non-Newtonian Slurry in Mechanical Process of CMP

Characterization of Pad–Wafer Contact Area and Distance in Chemical-Mechanical Polishing

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process

Chemical mechanical polishing: Theory and experiment

A Chemical Mechanical Polishing Model Based on the Viscous Flow of the Amorphous Layer

A model for chemical–mechanical polishing of a material surface based on contact mechanics

Novel Probability Density Function of Pad Asperity by Wear Effect over Time in Chemical Mechanical Planarization

Tribochemical mechanisms of abrasives for SiC and sapphire substrates in nanoscale polishing