A 3-10 Ghz Uwb Lna Using G(M)-Boosting Structure And Inductive-Peaking-Based Bandwidth Extension Technique In A 180 Nm Cmos Technology

Yanchen Liu,Deyu Kong,Rui Guo,J. J. Wang,Ning Ning,Qi Yu,Jinping Wei,Yang Liu
DOI: https://doi.org/10.1166/nnl.2017.2353
2017-01-01
Nanoscience and Nanotechnology Letters
Abstract:This paper presents the design of a 3-10 GHz Ultra-wideband (UWB) low noise amplifier (LNA) in an 180 nm CMOS process. The LNA realized a high gain and reduced Noise Figure (NF) benefiting from g(m)-boosting structure. By using inductive-peaking-based bandwidth extension technique, this LNA can achieve a flat gain from 3 to 10 GHz. The LNA exhibits a maximum gain of 13.7 dB with 3.3 dB in-band gain variation, a minimum NF of 4.0 dB and power consumption of 6.1 mW under a 1.8 V supply voltage. Moreover, the LNA occupies silicon area of 0.97 mm(2).
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