A Low Power High Gain UWB LNA in 0.18-Μm CMOS

Cai Li,Fu Zhongqian,Huang Lu
DOI: https://doi.org/10.1088/1674-4926/30/11/115004
2009-01-01
Abstract:A low power high gain differential UWB low noise amplifier (LNA) operating at 3-5 GHz is presented. A common gate input stage is used for wideband input matching; capacitor cross coupling (CCC) and current reuse techniques are combined to achieve high gain under low power consumption. The prototypes fabricated in 0.18-mu m CMOS achieve a peak power gain of 17.5 dB with a 3 dB bandwidth of 2.8-5 GHz, a measured minimum noise figure (NF) of 3.35 dB and -12.6 dBm input-referred compression point at 5 GHz, while drawing 4.4 mA from a 1.8 V supply. The peak power gain is 14 dB under a 4.5 mW power consumption (3 mA from a 1.5 V supply). The proposed differential LNA occupies an area of 1.01 mm(2) including test pads.
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