Abstract:A 3–5 GHz broadband flat gain differential low noise amplifier (LNA) is designed for the impulse radio ultra-wideband (IR-UWB) system. The gain-flatten technique is adopted in this UWB LNA. Serial and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product (GBW). Feedback networks are introduced to further extend the bandwidth and diminish the gain fluctuations. The prototype is fabricated in the SMIC 0.18 μm RF CMOS process. Measurement results show a 3-dB gain bandwidth of 2.4–5.5 GHz with a maximum power gain of 13.2 dB. The excellent gain flatness is achieved with ±0.45 dB gain fluctuations across 3–5 GHz and the minimum noise figure (NF) is 3.2 dB over 2.5–5 GHz. This circuit also shows an excellent input matching characteristic with the measured S11 below −13 dB over 2.9–5.4 GHz. The input-referred 1-dB compression point (IP1dB) is −11.7 dBm at 5 GHz. The differential circuit consumes 9.6 mA current from a supply of 1.8 V.

A 0.18 μm CMOS 3–5GHz switched gain low noise amplifier for UWB system

Analysis and Design of Ultra-Wideband Low-Noise Amplifier with Input/Output Bandwidth Optimization and Single-Ended/Differential-Input Reconfigurability.

A Low Power High Gain UWB LNA in 0.18-Μm CMOS

A 0.18 Μm CMOS 3–5 GHz Broadband Flat Gain Low Noise Amplifier

A fully-integrated low-power 3.1-10.6GHz UWB LNA in 0.18μm CMOS

Millimeter-wave low power UWB CMOS common-gate low-noise amplifier

A 3.1-5GHz high and flat gain UWB LNA

A Novel CMOS Low-Noise Amplifier Design for 3.1- to 10.6-Ghz Ultra-Wide-band Wireless Receivers

A 2.99 Db NF 15.6 Db Gain 3-10Ghz Ultra-wideband Low-Noise Amplifier for UWB Systems in 65 Nm CMOS

A Fully Integrated LNA for 3-5 GHz UWB Wireless Applications in 0.18-&Amp;#x03bc;m CMOS Technology

Design of Ultra-Wideband LNA with 3.6 ± 0.4 Db NF and 15.9 ± 1.1 Db Gain

A 0.1-10Ghz Ultra-Wideband High-Gain Low-Noise Amplifier for UWB Receiver

1.8-V 3.1-10.6-GHz CMOS low-noise amplifier for ultra-wideband applications

3–10 GHz, 6.54‐mw CMOS Ultrawideband Low‐noise Amplifier Using a Hybrid Structure

A 0.18 Mu M Cmos Ultra-Wideband Low-Noise Amplifier With High Iip3

Analysis And Design Of A Cmos Low Noise Amplifier For 3-5 Ghz Uwb Systems

Design of an Ultra-Wideband Low Noise Amplifier in a 0.18 Μm CMOS

30-50 Ghz High-Gain Cmos Uwb Lna

Design of a Fully Differential CMOS LNA for 3.1–10.6 GHz UWB Communication Systems

Design of 3.1～10.6 GHz Wideband Low Noise Amplifier with 0. 2 μm GaAs PHEMT

Design of an Ultra-Wideband CMOS Low Noise Amplifier