Abstract:A novel planar architecture is proposed for tunnel field-effect transistors (TFETs). The advantages of this architecture are exhibited, taking the InAs/Si TFET as an example, and the effects of different device parameters are analyzed in detail. Owing to the gate field being parallel to the tunneling interface, the gate control is enhanced, and a better electrical performance is obtained. Moreover, different from a conventional TFET, in which the effective tunneling area and current can hardly be modulated by the gate length, in our proposed device, the effective tunneling area and current can be adjusted depending on the actual requirements of circuit design, which increases the flexibility of TFET-based circuit design. In addition, the device architecture can also be extended to other materials, such as Ge/Si and GaSb/InAs, and thus be used for both n-type and p-type devices. The results show that the complementary digital inverter structure with InAs/Si as the n-type TFET and Ge/Si as the p-type TFET would be helpful for future ultralow power applications. This proposed structure without any complicated fabrication steps shows better compatibility with CMOS technology compared to other TFETs with heterojunction and structural innovations presented in theoretical works.

Characteristics of Cylindrical Surrounding-Gate GaAs X Sb 1-X /in Y Ga 1-Y As Heterojunction Tunneling Field-Effect Transistors

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

A Novel High-Performance Planar InAs/GaSb Face-Tunneling FET With Implanted Drain for Leakage Current Reduction

A Novel Planar InAs/Si Hetero-TFET with Buried Drain Design and Face-tunneling Technique

A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance

InGaAs Tunneling Field-Effect-Transistors With Atomic-Layer-Deposited Gate Oxides

Characteristic Enhancement in Tunnel Field-Effect Transistors Via Introduction of Vertical Graded Source

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Investigation of Performance Enhancement in Inas/Ingaas Heterojunction-Enhanced N-Channel Tunneling Field-Effect Transistor

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture.

High Performance Tunnel Field Effect Transistor with a Tri-Material-gate Structure

A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter

A Fully Analytical Current Model for Gate–Source Overlap Tunneling FETs as the Ternary Devices

Recessed Gate Cylindrical Heterostructure TFET, a Device with Extremely Steep Subthreshold Swing

p+-Al0.3Ga0.7Sb Pocket-Implanted L-shaped GaSb/InAs Heterojunction Vertical n-TFETs

Theoretical Investigation of Gaasbi/Gaasn Tunneling Field-Effect Transistors with Type-Ii Staggered Tunneling Junction

A Novel Tunnel FET Design Through Adaptive Bandgap Engineering with Constant Sub-Threshold Slope over 5 Decades of Current and High $\text{i}_{\mathrm {on}}/\text{i}_{\mathrm {OFF}}$ Ratio

Inn/Ingan Complementary Heterojunction-Enhanced Tunneling Field-Effect Transistor with Enhanced Subthreshold Swing and Tunneling Current

Heteromaterial Gate Tunnel Field Effect Transistor with Lateral Energy Band Profile Modulation

A Comb-Gate Silicon Tunneling Field Effect Transistor with Improved On-State Current

All 2D Heterostructure Tunnel Field Effect Transistors: Impact of Band Alignment and Heterointerface Quality