Abstract:MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.

3D Band Diagram and Photoexcitation of 2D–3D Semiconductor Heterojunctions

A van der Waals pn heterojunction with organic/inorganic semiconductors

Photodiode-Like Behavior and Excellent Photoresponse of Vertical Si/Monolayer MoS2 Heterostructures

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Lateral Multilayer/monolayer MoS2 Heterojunction for High Performance Photodetector Applications

Visualizing Band Profiles of Gate-Tunable Junctions in MoS2/WSe2 Heterostructure Transistors.

Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Three-dimensional Band Diagram in Lateral Polarity Junction III-nitride Heterostructures

Lateral Heterojunctions Within Monolayer Semiconductors

Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy

Band Structure Engineering in MoS2 Based Heterostructures Toward High‐Performance Phototransistors

Structural and Electronic Properties of Heterostructures Composed of Antimonene and Monolayer MoS2

Preparation and Charge Transfer at Sb2Se3/1L-MoS2 Heterojunction

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

Broadband and high-performance SnS 2 /FePS 3 /graphene van der Waals heterojunction photodetector

Controllable Photocurrent Generation in Lateral Bilayer MoS2-WS2 Heterostructure

Title : Observation of Long-Lived Interlayer Excitons in Monolayer MoSe 2-WSe 2 Heterostructures

Mixed‐Dimensional MoS2/Ge Heterostructure Junction Field‐Effect Transistors for Logic Operation and Photodetection

Broadband and High-Performance SnS2/FePS3/graphene Van Der Waals Heterojunction Photodetector