Abstract:MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex photoresponse characteristics. We study the electrical response to scanning photo-excitation on MoS2 monolayer (1L) and bilayer (2L) devices, and also on monolayer/bilayer (1L/2L) planar heterojunction and monolayer/few-layer/multi-layer (1L/FL/ML) planar double heterojunction devices to unveil the intrinsic mechanisms responsible for photocurrent generation in these materials and junctions. Strong photoresponse modulation is obtained by scanning the position of the laser spot, as a consequence of controlling the relative dominance of a number of layer dependent properties, including (i) photoelectric effect (PE), (ii) photothermoelectric effect (PTE), (iii) excitonic effect, (iv) hot photo-electron injection from metal, and (v) carrier recombination. The monolayer and bilayer devices show peak photoresponse when the laser is focused at the source junction, while the peak position shifts to the monolayer/multi-layer junction in the heterostructure devices. The photoresponse is found to be dependent on the incoming light polarization when the source junction is illuminated, although the polarization sensitivity drastically reduces at the monolayer/multi-layer heterojunction. Finally, we investigate laser position dependent transient response of photocurrent to reveal trapping of carriers in SiO2 at the source junction is the critical factor to determine the transient response in 2D photodetectors, and also show that, by systematic device design, such trapping can be avoided in the heterojunction devices, resulting in fast transient response. The insights obtained will play an important role in designing fast 2D TMDs based photodetector and related optoelectronic and thermoelectric devices.

Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions

A van der Waals pn heterojunction with organic/inorganic semiconductors

Robust Stacking-Independent Ultrafast Charge Transfer in MoS2/WS2 Bilayers

Multiphysics Modeling and Simulation of Carrier Dynamics and Thermal Transport in Monolayer MoS2/WSe2 Heterojunction

Charge Transport in Mos2/Wse2 Van Der Waals Heterostructure with Tunable Inversion Layer

Ultrafast Charge Transfer Cascade in a Mixed-Dimensionality Nanoscale Trilayer

Enhanced Conductivity Along Lateral Homojunction Interfaces of Atomically Thin Semiconductors

Nanoscale optical imaging of multi-junction MoS2-WS2 lateral heterostructure

Photothermionic Effect-Assisted Ultrafast Charge Transfer in NbS2/MoS2 Heterostructure

Layer-Dependent Electron Transfer and Recombination Processes in MoS2/WSe2 Multilayer Heterostructures.

A dielectric-defined lateral heterojunction in a monolayer semiconductor

Mechanisms of Ultrafast Charge Separation in a PTB7/Monolayer MoS2 van der Waals Heterojunction

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures

Lateral Multilayer/monolayer MoS2 Heterojunction for High Performance Photodetector Applications

Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T'/2H MoS2 Heterobilayers.

Enhanced exciton diffusion from interlayer charge-transfer transitions in PtSe2/MoSe2 van der Waals heterojunction

Charge transfer at carbon nanotube-graphene van der Waals heterojunctions.

Surface State Mediated Interlayer Excitons in a 2D Nonlayered-Layered Semiconductor Heterojunction

Phonon-Mediated Interlayer Charge Separation and Recombination in a MoSe2/WSe2 Heterostructure

Preparation and Charge Transfer at Sb2Se3/1L-MoS2 Heterojunction