Abstract:Arrays of vertically aligned single crystalline Si nanowires (NWs) decorated with arbitrarily shaped Si nanocrystals (NCs) have been fabricated by a silver assisted wet chemical etching method. Scanning electron microscopy and transmission electron microscopy are performed to measure the dimensions of the Si NWs as well as the Si NCs. A strong broad band and tunable visible (2.2 eV) to near-infrared (1.5 eV) photoluminescence (PL) is observed from these Si NWs at room temperature (RT). Our studies reveal that the Si NCs are primarily responsible for the 1.5-2.2 eV emission depending on the cross-sectional area of the Si NCs, while the large diameter Si/SiOx NWs yield distinct NIR PL consisting of peaks at 1.07, 1.10 and 1.12 eV. The latter NIR peaks are attributed to TO/LO phonon assisted radiative recombination of free carriers condensed in the electron-hole plasma in etched Si NWs observed at RT for the first time. Since the shape of the Si NCs is arbitrary, an analytical model is proposed to correlate the measured PL peak position with the cross-sectional area (A) of the Si NCs, and the bandgap (E(g)) of nanostructured Si varies as E(g) = E(g) (bulk) + 3.58 A(-0.52). Low temperature PL studies reveal the contribution of non-radiative defects in the evolution of PL spectra at different temperatures. The enhancement of PL intensity and red-shift of the PL peak at low temperatures are explained based on the interplay of radiative and non-radiative recombinations at the Si NCs and Si/SiO(x) interface. Time resolved PL studies reveal bi-exponential decay with size correlated lifetimes in the range of a few microseconds. Our results help to resolve a long standing debate on the origin of visible-NIR PL from Si NWs and allow quantitative analysis of PL from arbitrarily shaped Si NCs.

Ultraviolet-visible light photoluminescence induced by stacking faults in 3C-SiC nanowires.

Thermal Conductivity of Si Nanowires with Faulted Stacking Layers

Ultraviolet Photoluminescence from 3C-Sic Nanorods

Tensile Properties of Si Nanowires with Faulted Stacking Layers

Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis

Role of the Growth Facet on the Generation and Expansion of Stacking Faults in PVT-Grown N-Type 4H-Sic Single-Crystal Boules

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Electron Transition Pathways of Photoluminescence from 3C-Sic Nanocrystals Unraveled by Steady-State, Blinking and Time-Resolved Photoluminescence Measurements

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Photoluminescence of nc-Si/SiN superlattices embedded in optical microcavities

Tunable Violet–blue Emission from 3C-Sic Nanowires

Longitudinal Optical Phonon-Plasmon Coupling in Luminescent 3C-Sic Nanocrystal Films

Photoluminescence of Si-Rich Silicon Nitride: Defect-Related States and Silicon Nanoclusters

Luminescence associated with stacking faults in GaN

Optical Property Characterization of Silicon Quantum Wires

Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well

Origin of visible and near-infrared photoluminescence from chemically etched Si nanowires decorated with arbitrarily shaped Si nanocrystals

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

Photoluminescence and Photoluminescent Excitation of Single Crystalline α-Si3N4 Nanobelts

Observation of broad triangular Frank-type stacking faults and characterization of stacking faults with emission wavelengths below 430 nm in 4H–SiC epitaxial layers