Abstract:In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

Nonaqueous Organic Electrolyte for Photoelectrochemical Etching of Gallium Nitride Surface

Photoelectrochemical Etching of Gallium Nitride Surface by Complexation Dissolution Mechanism

Porous GaN Photoelectrode Fabricated by Photo-Assisted Electrochemical Etching Using Ionic Liquid As Etchant

A novel mild etchant for photoelectrochemical etching of GaN with enhanced photoresponse

Enhancing the photocatalytic activity of GaN by electrochemical etching

Electrochemical etching of highly conductive GaN single crystals

Metal-assisted Photochemical Etching of Gallium Nitride Using Electrodeposited Noble Metal Nanoparticles As Catalysts

Honeycomb-like Gallium Nitride Prepared Via Dual-Ion Synergistic Etching Mechanism Using Amino Acid As Etchant

Chemical Etching of Freestanding N-polar GaN in Control of the Surface Morphology

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

Light-assisted wet etching of semiconductor nitride GaN

Characterization of anisotropic wet etching of Gallium Nitride for surface orientations of the crystallographic zone in H 3 P O 4 etchant

Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N

Fabrication of high aspect ratio gallium nitride nanostructures by photochemical etching for enhanced photocurrent and photoluminescence property

Selective Lateral Photoelectrochemical Wet Etching of InGaN Nanorods

Investigation of Etch Rate Distribution by Micro-hemisphere for the Anisotropic Wet Etching of Ga-Face Gallium Nitride Crystal

Wet etching in beta-Ga2O3 bulk single crystals

Preparation and Characterization of GaN Micro/nano-Structures by the Electrodeless Photo-Assisted Chemical Etching

Highly Selective Dry Etching of Gan over Algan Using Inductively Coupled Cl-2/N-2/O-2 Plasmas

Fabrication and Photoluminescence Performance of Porous Gallium Nitride Luminescent Materials Using Different 1-Ethyl-3-methylimidazolium-based Ionic Liquids